参数资料
| 型号： | 1N6377G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | TVS 1500W 17.6V UNIDIRECT AXIAL |
| 产品变化通告： | Specification Update Storage Temp Range 14/Aug/2008 |
| 产品目录绘图： | Mosorb™ Axial Side |
| 标准包装： | 500 |
| 系列： | Mosorb™ |
| 电压 - 反向隔离（标准值）： | 15V |
| 电压 - 击穿： | 17.6V |
| 功率（瓦特）： | 1500W |
| 电极标记： | 单向 |
| 安装类型： | 通孔 |
| 封装/外壳： | DO-201AD，轴向 |
| 供应商设备封装： | 轴向 |
| 包装： | 散装 |
| 产品目录页面： | 2387 (CN2011-ZH PDF) |
| 其它名称： | 1N6377GOS |
1N6373 - 1N6381 Series (ICTE-5 - ICTE-36)
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T L ≤ 25 ° C
Steady State Power Dissipation @ T L ≤ 75 ° C, Lead Length = 3/8 ″
Derated above T L = 75 ° C
Thermal Resistance, Junction-to-Lead
Forward Surge Current (Note 2) @ T A = 25 ° C
Operating and Storage Temperature Range
Symbol
P PK
P D
R q JL
I FSM
T J , T stg
Value
1500
5.0
20
20
200
- 65 to +175
Unit
W
W
mW/ ° C
° C/W
A
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 5 and derated above T A = 25 ° C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless
otherwise noted, V F = 3.5 V Max. @ I F (Note 3) = 100 A)
Symbol
I PP
V C
V RWM
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
Working Peak Reverse Voltage
I F
I
I R
V BR
I T
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
Test Current
V C V BR V RWM
I R V F
I T
V
Q V BR
I F
Maximum Temperature Variation of V BR
Forward Current
V F
Forward Voltage @ I F
I PP
Uni-Directional TVS
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted, V F = 3.5 V Max. @ I F (Note 3) = 100 A)
JEDEC
Device ?
(ON Device)
Device
Marking
V RWM
(Note 4)
(Volts)
I R @
V RWM
( m A)
Breakdown Voltage
V BR (Note 5) (Volts) @ I T
Min Nom Max (mA)
V C @ I PP (Note 6)
V C I PP
(Volts) (A)
V C (Volts) (Note 6)
@ I PP = @ I PP =
1A 10 A
Q V BR
(mV/ ° C)
1N6373, G
1N6374, G
1N6375, G
1N6376, G
1N6377, G
1N6380, G
1N6381, G
ICTE-5RLG
ICTE-10RLG
ICTE-12RLG
ICTE-15RLG
ICTE-18, G
ICTE-36RLG
1N6373
1N6374
1N6375
1N6376
1N6377
1N6380
1N6381
ICTE-5
ICTE-10
ICTE-12
ICTE-15
ICTE-18
ICTE-36
5.0
8.0
10
12
15
36
45
5.0
10
12
15
18
36
300
25
2.0
2.0
2.0
2.0
2.0
300
2.0
2.0
2.0
2.0
2.0
6.0
9.4
11.7
14.1
17.6
42.4
52.9
6.0
11.7
14.1
17.6
21.2
42.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
9.4
15
16.7
21.2
25
65.2
78.9
9.4
16.7
21.2
25
30
65.2
160
100
90
70
60
23
19
160
90
70
60
50
23
7.1
11.3
13.7
16.1
20.1
50.6
63.3
7.1
13.7
16.1
20.1
24.2
50.6
7.5
11.5
14.1
16.5
20.6
54.3
70
7.5
14.1
16.5
20.6
25.2
54.3
4.0
8.0
12
14
18
50
60
4.0
8.0
12
14
18
26
3. Square waveform, PW = 8.3 ms, non-repetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V RWM ), which should be equal to or
greater than the dc or continuous peak operating voltage level.
5. V BR measured at pulse test current I T at an ambient temperature of 25 ° C and minimum voltage in V BR is to be controlled.
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
?The “G'' suffix indicates Pb-Free package or Pb-Free packages are available.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N6377G | 制造商:ON Semiconductor 功能描述:TVS DIODE |
| 1N6377HE3/51 | 功能描述:DIODE GEN PURPOSE 1.5KE 制造商:vishay semiconductor diodes division 系列:汽车级，AEC-Q101，TransZorb? 包装:散装 零件状态:停產 类型:齐纳 单向通道:1 电压 - 反向关态（典型值）:15V 电压 - 击穿（最小值）:17.6V 电压 - 箝位（最大值）@ Ipp:20.6V 电流 - 峰值脉冲（10/1000μs）:60A 功率 - 峰值脉冲:1500W（1.5kW） 电源线路保护:无 应用:汽车级 不同频率时的电容:- 工作温度:-55°C ~ 175°C（TJ） 安装类型:通孔 封装/外壳:DO-201AA，DO-27，轴向 供应商器件封装:1.5KE 标准包装:1,500 |
| 1N6377HE3/54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 15V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6377HE3/73 | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 15V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1N6377HE3_A/C | 功能描述:TVS DIODE 15VWM 20.6VC 1.5KE 制造商:vishay semiconductor diodes division 系列:汽车级，AEC-Q101，TransZorb? 包装:带卷（TR） 零件状态:在售 类型:齐纳 单向通道:1 双向通道:- 电压 - 反向关态（典型值）:15V 电压 - 击穿（最小值）:17.6V 电压 - 箝位（最大值）@ Ipp:20.6V 电流 - 峰值脉冲（10/1000μs）:60A 功率 - 峰值脉冲:1500W（1.5kW） 电源线路保护:无 应用:汽车级 不同频率时的电容:- 工作温度:-55°C ~ 175°C（TJ） 安装类型:通孔 封装/外壳:DO-201AA，DO-27，轴向 供应商器件封装:1.5KE 标准包装:1,400 |
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