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参数资料
| 型号： | 1N6386 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC, CASE 1, 2 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 174K |
| 代理商： | 1N6386 |
1500 WATT LOW CLAMPING FACTOR
TRANSIENT VOLTAGE SUPPRESSOR
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2008
10-09-2008 REVD
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N6373 thru 1N6389, e3
or MPTE-5 thru MPTE-45C, e3
1N6
373
thru
1N6
389,
e3
MPTE-5
thr
u
MPTE-45
C
,e3
ELECTRICAL CHARACTERISTICS @ 25oC (Unidirectional)
MICROSEMI
PART NUMBER
STAND-OFF
VOLTAGE
(NOTE 1)
VWM
VOLTS
MAXIMUM
REVERSE
LEAKAGE
@VWM
ID
μA
MINIMUM*
BREAKDOWN
VOLTAGE
@ 1.0 mA
V(BR) (min)
VOLTS
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
IPP1 = 1A
VC
VOLTS
MAXIMUM
CLAMPING
VOLTAGE
(Fig. 2)
@ IPP2 = 10A
VC
VOLTS
MAXIMUM
PEAK PULSE
CURRENT
IPP3
A
1N6373
1N6374
1N6375
1N6376
1N6377
MPTE-5
MPTE-8
MPTE-10
MPTE-12
MPTE-15
5.0
8.0
10.0
12.0
15.0
300
25
2
6.0
9.4
11.7
14.1
17.6
7.1
11.3
13.7
16.1
20.1
7.5
11.5
14.1
16.5
20.6
160
100
90
70
60
1N6378
1N6379
1N6380
1N6381
MPTE-18
MPTE-22
MPTE-36
MPTE-45
18.0
22.0
36.0
45.0
2
21.2
25.9
42.4
52.9
24.2
29.8
50.6
63.3
25.2
32.0
54.3
70.0
50
40
23
19
VF at 100 amps peak, 8.3 msec sine wave equals 3.5 volts maximum.
ELECTRICAL CHARACTERISTICS @ 25oC (Bidirectional)
1N6382
1N6383
1N6384
1N6385
MPTE-5C
MPTE-8C
MPTE-10C
MPTE-12C
MPTE-15C
5.0
8.0
10.0
12.0
15.0
300
25
2
6.0
9.4
11.7
14.1
17.6
7.1
11.4
14.1
16.7
20.8
7.5
11.6
14.5
17.1
21.4
160
100
90
70
60
1N6386
1N6387
1N6388
1N6389
MPTE-18C
MPTE-22C
MPTE-36C
MPTE-45C
18.0
22.0
36.0
45.0
2
21.2
25.9
42.4
52.9
24.8
30.8
50.6
63.3
25.5
32.0
54.3
70.0
50
40
23
19
C Suffix indicates Bidirectional
NOTE 1: TVS devices are normally selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater than the dc or
continuous peak operating voltage level.
* The minimum breakdown voltage as shown takes into consideration the +1 volt tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Similar devices are available with reduced clamping voltages where tighter regulated
power supply voltages are employed.
GRAPHS
FIGURE 1
FIGURE 2
Peak Pulse Power vs. Pulse Time
Typical Characteristic Clamping Voltage
vs. Peak Pulse Current
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N6386-E3/54 | 制造商:Vishay Semiconductors 功能描述:1.5KW,18V 10%,BIDIR,AXIAL TVS |
| 1N6386-E3/73 | 制造商:Vishay Semiconductors 功能描述:1.5KW,18V 10%,BIDIR,AXIAL TVS |
| 1N6386HE3/51 | 功能描述:DIODE GEN PURPOSE 1.5KE 制造商:vishay semiconductor diodes division 系列:汽车级，AEC-Q101，TransZorb? 包装:散装 零件状态:停產 类型:齐纳 双向通道:1 电压 - 反向关态（典型值）:18V 电压 - 击穿（最小值）:21.2V 电压 - 箝位（最大值）@ Ipp:25.5V 电流 - 峰值脉冲（10/1000μs）:50A 功率 - 峰值脉冲:1500W（1.5kW） 电源线路保护:无 应用:汽车级 不同频率时的电容:- 工作温度:-55°C ~ 175°C（TJ） 安装类型:通孔 封装/外壳:DO-201AA，DO-27，轴向 供应商器件封装:1.5KE 标准包装:1,500 |
| 1N6386HE3/54 | 制造商:Vishay Semiconductors 功能描述:1.5KW,18V 10%,BIDIR,AXIAL TVS |
| 1N6386HE3/73 | 制造商:Vishay Semiconductors 功能描述:1.5KW,18V 10%,BIDIR,AXIAL TVS |
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