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参数资料
| 型号： | 1N6626US |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 4 A, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, GLASS, MELF-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 44K |
| 代理商： | 1N6626US |
221 West Industry Court Deer Park, NY 11729-4681 Phone (631) 586 7600 Fax (631) 242 9798
World Wide Web Site - http://www.sensitron.com E-Mail Addre1N - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5077, REV. B
Ultrafast Recovery Rectifier
Hermetic, non-cavity glass package
Metallurgically bonded
Operating and Storage Temperature: -65oC to +175o
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
All ratings are at TA = 25
oC unless otherwise specified.
SJ
SX
SV
1N6626,U,US thru 1N6631,U,US
Rating
Symbol
Condition
Max
Units
WORKING PEAK REVERSE VOLTAGE
1N6626, U, US
1N6627, U ,US
1N6628, U, US
1N6629, U, US
1N6630 ,U, US
1N6631, U, US
VRWM
200
400
600
800
900
1000
Volts
AVERAGE RECTIFIED FORWARD CURRENT
1N6626 thru 1N6628
1N6629 thru 1N6631
Io
TL= 75
oC
2.3
1.8
Amps
AVERAGE RECTIFIED FORWARD CURRENT
1N6626U, US thru 1N6628U, US
1N6629U, US thru 1N6631U, US
Io
TEC= 110
oC
4.0
2.8
Amps
PEAK FORWARD SURGE CURRENT
1N6626, U, US thru 1N6630,U, US
1N6631, U, US
IFSM
Tp=8.3ms
75
60
A(pk)
MAXIMUM REVERSE CURRENT
1N6626, U, US thru 1N6630,U, US
1N6631, U, US
IR @ VRWM
Tj = 25
oC
2.0
4.0
μAmps
MAXIMUM REVERSE CURRENT
1N6626, U, US thru 1N6630,U, US
1N6631, U, US
IR @ VRWM
Tj = 150
oC
500
600
μAmps
MAX. PEAK FORWARD VOLTAGE (PULSED)
1N6626, U, US thru 1N6628,U, US
1N6629,U, US to 1N6630,U, US
1N6631, U, US
VFM
IF=4A
IF=3A
IF=2A
1.50
1.70
1.95
Volts
PEAK RECOVERY CURRENT
1N6626, U, US thru 1N6628,U, US
1N6629,U, US to 1N6630,U, US
1N6631, U, US
IRM
IF=2A,
100A/
μ
3.5
4.2
5.0
A(pk)
MAXIMUM REVERSE RECOVERY TIME
1N6626, U, US thru 1N6628,U, US
1N6629,U, US to 1N6630,U, US
1N6631, U, US
Trr
IF=0.5A
IRM =1.0A
30
50
60
ns
FORWARD RECOVERY VOLTAGE
1N6626, U, US thru 1N6628,U, US
1N6629,U, US to 1N6630,U, US
1N6631, U, US
VFRM
IF=1A
tr=12ns
8
12
20
Volts
THERMAL RESISTANCE (Axial)
1N6626 thru 1N6631
R
θ
JL
L=.375
22
oC/W
THERMAL RESISTANCE (MELF)
1N6626U, US thru 1N6631U, US
R
θ
JC
L=0
6.5
oC/W
相关PDF资料 |
PDF描述 |
|---|---|
| 1N6629V | 1.4 A, SILICON, RECTIFIER DIODE |
| 1N6630US | 2.8 A, SILICON, RECTIFIER DIODE |
| 1N6631S | 1.4 A, SILICON, RECTIFIER DIODE |
| 1N936AV | 9 V, SILICON, VOLTAGE REFERENCE DIODE |
| 1N5344B-T | 8.2 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N6626US_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS |
| 1N6627 | 制造商:Microsemi Corporation 功能描述:Diode Switching 440V 1.75A 2-Pin Case E 制造商:Microsemi Corporation 功能描述:E - Bulk 制造商:Microsemi 功能描述:Diode Switching 440V 1.75A 2-Pin Case E |
| 1N6627D3A | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:ULTRA FAST RECOVERY POWER RECTIFIER |
| 1N6627D3B | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:ULTRA FAST RECOVERY POWER RECTIFIER |
| 1N6627JAN | 制造商:Microsemi Corporation 功能描述:Diode Switching 440V 1.75A 2-Pin Case E |
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