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参数资料
| 型号： | 1N756D |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 8.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 封装： | HERMETIC SEALED, GLASS PACKAGE-1 |
| 文件页数： | 1/2页 |
| 文件大小： | 23K |
| 代理商： | 1N756D |
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500 mW @ +50°C
Power Derating: 4 mW / °C above +50°C
Forward Voltage @ 200mA: 1.1 volts maximum
1N746A-1 THRU 1N759-1 AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/127
1N4370A-1 THRU 1N4372A-1 AVAILABLE IN
JAN, JANTX AND JANTXV
PER MIL-PRF-19500/127
DOUBLE PLUG CONSTRUCTION
METALLURGICALLY BONDED
1N746 thru 1N759A
and
1N746A-1 thru 1N759A-1
and
1N4370 thru 1N4372A
and
1N4370A-1 thru 1N4372A-1
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
250 C/W maximum at L = .375 inch
THERMAL IMPEDANCE: (ZOJX): 35
C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION: Any.
ELECTRICAL CHARACTERISTICS @ 25°C
JEDEC
NOMINAL
ZENER
MAXIMUM
TYPE
ZENER
TEST
ZENER
REVERSE CURRENT
ZENER
NUMBER
VOLTAGE
CURRENT
IMPEDANCE
I R @ V R
CURRENT
VZ @ 1ZT
1ZT
(NOTE 3)
1
ZM
(NOTE 1)
(NOTE 2)
ZZT@ 1ZT
VOLTS
mA
OHMS
A
VOLTS
mA
1N4370A
2.4
20
30
100
1.0
155
1N4371A
2.7
20
30
60
1.0
140
1N4372A
3.0
20
29
30
1.0
125
1N746A
3.3
20
28
5
1.0
120
1N747A
3.6
20
24
3
1.0
110
1N748A
3.9
20
23
2
1.0
100
1N749A
4.3
20
22
2
1.0
90
1N750A
4.7
20
19
5
1.5
85
1N751A
5.1
20
17
5
2.0
75
1N752A
5.6
20
11
5
2.5
70
1N753A
6.2
20
7
5
3.5
65
1N754A
6.8
20
5
2
4.0
60
1N755A
7.5
20
6
2
5.0
55
1N756A
8.2
20
8
1
6.0
50
1N757A
9.1
20
10
1
7.0
45
1N758A
10.0
20
17
1
8.0
40
1N759A
12.0
20
30
1
9.0
35
NOTE 1
Zener voltage tolerance on "A" suffix is +5%. No Suffix denotes + 10% tolerance,
"C" suffix denotes + 2% tollerance and "D" suffix denotes + 1% tolerance.
NOTE 2
Zener voltage is measured with the device junction in thermal equilibrium at an ambient
temperature of 25°C + 3°C.
NOTE 3
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal
to 10% of 1ZT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N756D-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:SILICON 400 mW ZENER DIODES |
| 1N756DTR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:SILICON 400 mW ZENER DIODES |
| 1N756DTR-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:SILICON 400 mW ZENER DIODES |
| 1N756DUR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:SILICON 400 mW ZENER DIODES |
| 1N756DUR-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:SILICON 400 mW ZENER DIODES |
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