- 您现在的位置：买卖IC网 > PDF目录222118 > 1N824 (MICROSEMI CORP) Bobbins Transformer; Supply Voltage:230V; Power Rating:2.5VA; Mounting Type:PCB Surface; Approval Bodies:cURus; External Depth:1.375"; External Height:0.813"; External Width:1.125"; Frequency:60GHz; Leaded Process Compatible:Yes PDF资料下载
参数资料
| 型号： | 1N824 |
| 厂商： | MICROSEMI CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Bobbins Transformer; Supply Voltage:230V; Power Rating:2.5VA; Mounting Type:PCB Surface; Approval Bodies:cURus; External Depth:1.375"; External Height:0.813"; External Width:1.125"; Frequency:60GHz; Leaded Process Compatible:Yes |
| 中文描述： | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| 封装： | HERMETIC SEALED, GLASS, DO-7, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 317K |
| 代理商： | 1N824 |
6.2 & 6.55 Volt Temperature Compensated
Zener Reference Diodes
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2003
10-27-2003 REV C
W
.Mi
cr
os
em
i
.C
O
M
SCOTTSD A L E DIVISION
1N821 thru 1N829A-1 DO-7
1N
82
1—
1N
82
9A
-1
DESCRIPTION
APPEARANCE
The popular 1N821 thru 1N829 series of Zero-TC Reference Diodes
provides a selection of both 6.2 V and 6.55 V nominal voltages and
temperature coefficients to as low as 0.0005%/oC for minimal voltage
change with temperature when operated at 7.5 mA. These glass axial-
leaded DO-7 reference diodes are also available in JAN, JANTX, JANTXV,
and JANS military qualifications. Microsemi also offers numerous other
Zener Reference Diode products for a variety of other voltages up to 200 V.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
JEDEC registered 1N821 thru 1N829 series
Internal metallurgical bonds
Double anode option with 1N822 and 1N824 selection
Reference voltage selection of 6.2 V & 6.55 V +/-5%
with further tight tolerance options at nominal of 6.35 V
1N821, 823, 825, 827 and 829 also have military
qualification to MIL-PRF-19500/159 up to the JANS
level by adding JAN, JANTX, JANTXV, or JANS
prefixes to part numbers as well as the “-1” suffix, e.g.
JANTX1N829-1, etc.
Radiation Hardened devices available by changing
“1N” prefix to “RH”, e.g. RH827, RH 829, RH829A,
etc. Also consult factory for “RH” data sheet brochure
Military surface mount equivalents also available in
DO-213AA with UR-1 suffix and JAN, JANTX, or
JANTXV prefix, e.g. JANTX1N829UR-1 (see separate
data sheet)
Also available in smaller axial-leaded DO-35 package
(see separate data sheet)
Provides minimal voltage changes over a broad
temperature range
For instrumentation and other circuit designs
requiring a stable voltage reference
Maximum temperature coefficient selections
available from 0.01%/C to 0.0005%/C
Tight voltage tolerances with nominal reference
voltages of 6.35 V available by adding tolerance
1%, 2%, 3%, etc. after the part number for
identification e.g. 1N827-2%, 1N829A -1%, 1N829-
1-1%, etc.
Flexible axial-lead mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method
1020
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Operating & StorageTemperature: -65oC to +175oC
DC Power Dissipation: 500 mW @ TL = 25oC and
maximum current IZM of 70 mA. NOTE: For optimum
voltage-temperature stability, IZ = 7.5 mA (less than 50
mW in dissipated power)
Solder temperatures: 260 oC for 10 s (maximum)
CASE: Hermetically sealed glass case with DO-7
(DO-204AA) package
TERMINALS: Tin-lead plated and solderable per
MIL-STD-750, Method 2026
MARKING: Part number and cathode band (except
double anode 1N822 and 1N824)
POLARITY: Reference diode to be operated with
the banded end positive with respect to the
opposite end
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 0.2 grams.
See package dimensions on last page
DO-7
(DO-204AA)
相关PDF资料 |
PDF描述 |
|---|---|
| 1N914-B | SILICON, SIGNAL DIODE |
| 1N914B | 0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35 |
| 1N957A | 6.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N968BT26A | 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 1N974B-TP-TP | 36 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N824-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
| 1N824-1-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated |
| 1N824-1-2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated |
| 1N8241N825 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:TEMPERATURE COMPENSATED ZENER REFERENCE DIODES |
| 1N824-2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated |
发布紧急采购，3分钟左右您将得到回复。