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参数资料
| 型号： | 1N829 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35 |
| 文件页数： | 1/2页 |
| 文件大小： | 97K |
| 代理商： | 1N829 |
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
JEDEC
ZENER
MAXIMUM
VOLTAGE
EFFECTIVE
TYPE
VOLTAGE
TEST
ZENER
TEMPERATURE
NUMBER
CURRENT
IMPEDANCE
STABILITY
COEFFICIENT
v
z
@ I
ZT
I
ZT
(Note 1)
V
ZT
Z
ZT
-55° to +100°
(Note 2)
VOLTS
mA
OHMS
mV
% / °C
1N821
5.9—6.5
7.5
15
96
0.01
1N821A
5.9—6.5
7.5
10
96
0.01
1N822
5.9—6.5
7.5
15
96
0.01
1N823
5.9—6.5
7.5
15
48
0.005
1N823A
5.9—6.5
7.5
10
48
0.005
1N824
5.9—6.5
7.5
15
48
0.005
1N825
5.9—6.5
7.5
15
19
0.002
1N825A
5.9—6.5
7.5
10
19
0.002
1N826
6.2—6.9
7.5
15
20
0.002
1N827
5.9—6.5
7.5
15
9
0.001
1N827A
5.9—6.5
7.5
10
9
0.001
1N828
6.2—6.9
7.5
15
10
0.001
1N829
5.9—6.5
7.5
15
5
0.0005
1N829A
5.9—6.5
7.5
10
5
0.0005
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ +50°C
Power Derating: 4 mW / °C above +50°C
REVERSE LEAKAGE CURRENT
lR = 2
A @ 25°C & V
R = 3 Vdc
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specied.
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING POSITION: Any.
Double Anode: Electrical Specications Apply Under Both Bias Polarities.
NOTE 1
Zener impedance is derived by superimposing on l
ZT
A 60Hz rms a.c. current equal
to 10% of l
ZT
.
NOTE 2
The maximum allowable change observed over the entire temperature range i.e.,
the diode voltage will not exceed the specied mV at any discrete temperature
between the established limits, per JEDEC standard No. 5.
1N821-1,1N823-1,1N825-1,1N827-1 AND 1N829-1 AVAILABLE IN
JAN, JANTX, JANTXV
AND JANS PER MIL-PRF-19500/159
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
METALLURGICALLY BONDED
DOUBLE PLUG CONSTRUCTION
1N821 thru 1N829A
and
1N821-1 thru 1N829-1
相关PDF资料 |
PDF描述 |
|---|---|
| 1N936B-1 | 9 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35 |
| 1N936B | 9 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35 |
| 1N937A | 9 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35 |
| 1N938B | 9 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35 |
| 1N939 | 9 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N829(DO35) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:0TC Reference Voltage Zener |
| 1N829-1 | 制造商:Microsemi Corporation 功能描述:DIODE ZENER 6.2V 500MW DO-35 |
| 1N829-1(DO35) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:0TC Reference Voltage Zener |
| 1N829-1-1 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated |
| 1N829-1-2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated |
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