参数资料
型号: 1N914BT50A
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.2 A, SILICON, SIGNAL DIODE, DO-35
文件页数: 1/3页
文件大小: 43K
代理商: 1N914BT50A
1N/FDLL
914/A/B
/
916/A/B
/
4148
/
4448
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
2002 Fairchild Semiconductor Corporation
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
100
V
IF(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
T
stg
Storage Temperature Range
-65 to +200
°C
T
J
Operating Junction Temperature
175
°C
Symbol
Characteristic
Max
Units
1N/FDLL 914/A/B / 4148 / 4448
P
D
Power Dissipation
500
mW
RθJA
Thermal Resistance, Junction to Ambient
300
°C/W
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B
相关PDF资料
PDF描述
1N916T50R 0.2 A, SILICON, SIGNAL DIODE, DO-35
1N916BT26R 0.2 A, SILICON, SIGNAL DIODE, DO-35
1N4449 SILICON, SIGNAL DIODE
1N4448 SILICON, SIGNAL DIODE
1N4451 0.2 A, SILICON, SIGNAL DIODE, DO-35
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