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参数资料
| 型号： | 1N914BWT |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 175K |
| 描述： | IC DIODE FAST SW 75V SOD-523F |
| 标准包装： | 1 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 75V |
| 电流 - 平均整流 (Io)： | 200mA |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 100mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 4ns |
| 电流 - 在 Vr 时反向漏电： | 5µA @ 75V |
| 电容@ Vr, F： | 4pF @ 0V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-79，SOD-523F |
| 供应商设备封装： | SOD-523F |
| 包装： | 标准包装 |
| 产品目录页面： | 1611 (CN2011-ZH PDF) |
| 其它名称： | 1N914BWTDKR |
 1N4148WT / 1N4448WT / 1N 914BWT — High Conductanc e Fast Switching Diode ? 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N4148WT / 1N4448WT / 1N914BWT Rev. A2 1 September 2009 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode Features ? Fast Switching Diode (Trr <4.0nsec) ? Flat Lead, Surface Mount Device Under 0.70mm Height ? Extremely Small Outline Plastic Package SOD523F ? Moisture Level Sensitivity 1 ? Pb-free Version and RoHS Compliant ? Matte Tin (Sn) Lead Finish ? Green Mold Compound Absolute Maximum Ratings* TA=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics * Device mounted on FR-4 PCB minimum land pad. Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Value Units VRSM Non-Repetitive Peak Reverse Voltage 75 V VRRM Repetitive Peak Reverse Voltage 75 V I FRM Repetitive Peak Forward Current 300 mA TJ Operating Junction Temperature Range -55 to +150 °C TSTG Storage Temperature Range -55 to +150 °C Symbol Parameter Value Units PD Power Dissipation (TC=25°C) 200 mW RθJA Thermal Resistance, Junction to Ambient 500 °C/W Symbol Parameter Test Conditions Min Typ Max Units BVR Breakdown Voltage IR = 100 μA IR = 5 μA 100 75 V IR Reverse Current VR = 20 V VR = 75 V 25 5 nA μA VF Forward Voltage 1N4148WT 1N4448WT/ 914BWT 1N4448WT/ 914BWT IF = 5 mA IF = 10 mA IF = 100 mA 0.62 0.72 1 1 V CO Diode Capacitance VR = 0, f = 1 MHz 4 pF TRR Reverse Recovery Time I F = 10 mA, VR = 6.0 V I RR = 1 mA, RL = 100 Ω 4nS SOD-523F Band Indicates Cathode Device Marking Code Device Type Device Marking 1N4148WT E1 1N4448WT E2 1N914BWT E3 Cathode ELECTRICAL SYMBOL Anode |
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