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参数资料
| 型号： | 1N986BRL2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 110 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH |
| 文件页数： | 11/18页 |
| 文件大小： | 185K |
| 代理商： | 1N986BRL2 |
GENERAL DATA — 500 mW DO-35 GLASS
Motorola TVS/Zener Device Data
6-98
500 mW DO-35 Glass Data Sheet
APPLICATION NOTE — ZENER VOLTAGE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junc-
tion temperature under any set of operating conditions in order
to calculate its value. The following procedure is recom-
mended:
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA.
θLAisthelead-to-ambientthermalresistance(°C/W)andPDis
the power dissipation. The value for
θLA will vary and depends
on the device mounting method.
θLA is generally 30 to 40°C/W
for the various clips and tie points in common use and for
printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the tie
point. The thermal mass connected to the tie point is normally
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the mea-
sured value of TL, the junction temperature may be deter-
mined by:
TJ = TL + TJL.
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
TJL = θJLPD.
For worst-case design, using expected limits of IZ, limits of
PD and the extremes of TJ(TJ) may be estimated. Changes in
voltage, VZ, can then be found from:
V = θVZTJ.
θVZ, the zener voltage temperature coefficient, is found from
Figures 4 and 5.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Surge limitations are given in Figure 7. They are lower than
would be expected by considering only junction temperature,
as current crowding effects cause temperatures to be ex-
tremely high in small spots, resulting in device degradation
should the limits of Figure 7 be exceeded.
LL
500
400
300
200
100
0
0.2
0.4
0.6
0.8
1
2.4–60 V
62–200 V
L, LEAD LENGTH TO HEAT SINK (INCH)
JL
,JUNCTION-T
O-LEAD
THERMAL
RESIST
ANCE
(
C/W)
θ
°
Figure 2. Typical Thermal Resistance
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
+25
°C
+125
°C
1000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
34
5
6
7
8
9
10
11
12
13
14
15
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
I
,LEAKAGE
CURRENT
(
A
)
R
Figure 3. Typical Leakage Current
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N986BUR-1 | 制造商:CDI-DIODE 制造商全称:Compensated Deuices Incorporated 功能描述:ZENER DIODES |
| 1N986C | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION |
| 1N986D | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Silicon 500 mW Zener Diodes |
| 1N987 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Silicon 500 mW Zener Diodes |
| 1N987A | 制造商:Microsemi Corporation 功能描述:ZENER SGL 120V 10% 480MW 2PIN DO-35 - Bulk |
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