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参数资料
| 型号： | 1N986BRL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 110 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH |
| 文件页数： | 13/18页 |
| 文件大小： | 185K |
| 代理商： | 1N986BRL |
GENERAL DATA — 500 mW DO-35 GLASS
Motorola TVS/Zener Device Data
6-100
500 mW DO-35 Glass Data Sheet
100
70
50
30
20
10
7
5
3
2
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
P
pk
,PEAK
SURGE
POWER
(W
A
TTS)
PW, PULSE WIDTH (ms)
5% DUTY CYCLE
10% DUTY CYCLE
20% DUTY CYCLE
11 V–91 V NONREPETITIVE
1.8 V–10 V NONREPETITIVE
RECTANGULAR
WAVEFORM
TJ =25°C PRIOR TO
INITIAL PULSE
Figure 7a. Maximum Surge Power 1.8–91 Volts
1000
700
500
300
200
100
70
50
30
20
10
7
5
3
2
1
0.01
0.1
1
10
100
1000
P
pk
,PEAK
SURGE
POWER
(W
A
TTS)
PW, PULSE WIDTH (ms)
Figure 7b. Maximum Surge Power DO-204AH
100–200 Volts
1000
500
200
100
50
20
10
1
2
5
0.1
0.2
0.5
1
2
5
10
20
50
100
IZ, ZENER CURRENT (mA)
Figure 8. Effect of Zener Current on
Zener Impedance
Z
,DYNAMIC
IMPEDANCE
(OHMS)
Z
,DYNAMIC
IMPEDANCE
(OHMS)
1000
700
500
200
100
70
50
20
10
7
5
2
1
2
3
5
7
10
20
30
50
70 100
VZ, ZENER VOLTAGE (VOLTS)
Figure 9. Effect of Zener Voltage on Zener Impedance
Figure 10. Typical Forward Characteristics
RECTANGULAR
WAVEFORM, TJ =25°C
100–200 VOLTS NONREPETITIVE
TJ =25°C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
IZ =1 mA
5mA
20 mA
TJ =25°C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
VZ = 2.7 V
47 V
27 V
6.2 V
VF, FORWARD VOLTAGE (VOLTS)
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1000
500
200
100
50
20
10
5
2
1
I F
,FOR
W
ARD
CURRENT
(mA)
MINIMUM
MAXIMUM
150
°C
75
°C
0
°C
25
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N986BUR-1 | 制造商:CDI-DIODE 制造商全称:Compensated Deuices Incorporated 功能描述:ZENER DIODES |
| 1N986C | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:METALLURGICALLY BONDED DOUBLE PLUG CONSTRUCTION |
| 1N986D | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Silicon 500 mW Zener Diodes |
| 1N987 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Silicon 500 mW Zener Diodes |
| 1N987A | 制造商:Microsemi Corporation 功能描述:ZENER SGL 120V 10% 480MW 2PIN DO-35 - Bulk |
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