参数资料
| 型号： | 1PMT16AT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/6页 |
| 文件大小： | 0K |
| 描述： | TVS 200W 16V POWERMITE |
| 产品变化通告： | Product Obsolescence 06/Oct/2006 |
| 标准包装： | 12,000 |
| 电压 - 反向隔离（标准值）： | 16V |
| 电压 - 击穿： | 17.8V |
| 功率（瓦特）： | 200W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-216AA |
| 供应商设备封装： | Powermite |
| 包装： | 带卷 (TR) |
1PMT5.0AT1G/T3G Series
ELECTRICAL CHARACTERISTICS (T L = 30 ° C unless otherwise noted, V F = 1.25 Volts @ 200 mA)
V RWM
V BR @ I T (V) (Note 6)
I T
I R @ V RWM
V C @ I PP
I PP (A)
Device *
1PMT5.0AT1G, T3G
1PMT7.0AT1G, T3G
1PMT12AT1G, T3G
1PMT16AT1G, T3G
1PMT18AT1G, T3G
1PMT22AT1G, T3G
1PMT24AT1G, T3G
1PMT26AT1G, T3G
1PMT28AT1G, T3G
1PMT30AT1G, T3G
1PMT33AT1G, T3G
1PMT36AT1G, T3G
1PMT40AT1G, T3G
1PMT48AT1G, T3G
1PMT51AT1G, T3G
1PMT58AT1G, T3G
Marking
MKE
MKM
MLE
MLP
MLT
MLX
MLZ
MME
MMG
MMK
MMM
MMP
MMR
MMX
MMZ
MNG
(Note 5)
5.0
7.0
12
16
18
22
24
26
28
30
33
36
40
48
51
58
Min
6.4
7.78
13.3
17.8
20.0
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
53.3
56.7
64.4
Nom
6.7
8.2
14.0
18.75
21.0
25.6
28.1
30.4
32.8
35.1
38.7
42.1
46.8
56.1
59.7
67.8
Max
7.0
8.6
14.7
19.7
22.1
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
58.9
62.7
71.2
(mA)
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
( m A)
50
30
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
(V)
9.2
12
19.9
26
29.2
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
77.4
82.4
93.6
(Note 7)
21.7
16.7
10.1
7.7
6.8
5.6
5.1
4.8
4.4
4.1
3.8
3.4
2.7
2.3
2.1
1.9
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V RWM ) which should be equal to or greater
than the DC or continuous peak operating voltage level.
6. V BR measured at pulse test current I T at ambient temperature of 25 ° C.
7. Surge current waveform per Figure 2 and derate per Figure 4.
*The “G’’ suffix indicates Pb ? Free package.
http://onsemi.com
3
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| 1PMT16AT3G | 功能描述:TVS 二极管 - 瞬态电压抑制器 16V 200W Powermite Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1PMT18AT1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 18V 200W Powermite RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1PMT18AT1G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Zener Transient Voltage Suppressor POWERMITE Package |
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