参数资料
| 型号： | 1PMT30AT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | TVS 200W 30V POWERMITE |
| 产品变化通告： | Product Obsolescence 06/Oct/2006 |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 30V |
| 电压 - 击穿： | 33.3V |
| 功率（瓦特）： | 200W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-216AA |
| 供应商设备封装： | Powermite |
| 包装： | 带卷 (TR) |
| 其它名称： | 1PMT30AT1GOS |
1PMT5.0AT1G/T3G Series
Zener Transient
Voltage Suppressor
POWERMITE ? Package
The 1PMT5.0AT1G/T3G Series is designed to protect voltage
sensitive components from high voltage, high energy transients.
Excellent clamping capability, high surge capability, low Zener
impedance and fast response time. The advanced packaging
technique provides for a highly efficient micro miniature, space
saving surface mount with its unique heatsink design. The
POWERMITE has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles (1.1 mm) in the industry. Because of its small size, it
is ideal for use in cellular phones, portable devices, business
machines, power supplies and many other industrial/consumer
http://onsemi.com
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5 ? 58 V
200 W PEAK POWER
applications.
1
2
POWERMITE
Specification Features:
? Stand ? off Voltage: 5.0 V ? 58 V
? Peak Power ? 200 W @ 1 ms (1PMT5.0A ? 1PMT36A)
? 175 W @ 1 ms (1PMT40A ? 1PMT58A)
? Maximum Clamp Voltage @ Peak Pulse Current
? Low Leakage
? Response Time is Typically < 1 ns
? ESD Rating of Class 3 (> 16 kV) per Human Body Model
? Low Profile ? Maximum Height of 1.1 mm
? Integral Heatsink/Locking Tabs
? Full Metallic Bottom Eliminates Flux Entrapment
? Small Footprint ? Footprint Area of 8.45 mm 2
? POWERMITE is JEDEC Registered as DO ? 216AA
? Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes
? Cathode Indicated by Polarity Band
? These Devices are Pb ? Free and are RoHS Compliant
1: CATHODE
2: ANODE
1
CASE 457
2
MARKING DIAGRAM
M
1 Mxx G 2
CATHODE ANODE
M = Date Code
Mxx = Specific Device Code
(See Table on Page 3)
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
G
= Pb ? Free Package
readily solderable
MOUNTING POSITION: Any
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
Device
ORDERING INFORMATION
Package Shipping ?
260 ° C for 10 Seconds
1PMTxxAT1G
POWERMITE
(Pb ? Free)
3,000/Tape & Reel
1PMTxxAT3G
POWERMITE 12,000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
May, 2013 ? Rev. 10
1
Publication Order Number:
1PMT5.0AT3/D
相关PDF资料 |
PDF描述 |
|---|---|
| MMA25-0051R1 | CONN RACK/PANEL 5POS 5A |
| 1PMT28AT1G | TVS 200W 28V POWERMITE |
| TSW-117-23-G-S | CONN HEADER 17POS .100" SGL GOLD |
| TSW-119-23-G-S | CONN HEADER 19POS .100" SGL GOLD |
| TSW-120-23-G-S | CONN HEADER 20POS .100" SGL GOLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1PMT30AT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Zener Transient Voltage Suppressor POWERMITE Package |
| 1PMT30AT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Zener Transient Voltage Suppressor POWERMITE Package |
| 1PMT33AT1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 33V 200W Powermite RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1PMT33AT1G | 功能描述:TVS 二极管 - 瞬态电压抑制器 33V 200W Powermite Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1PMT33AT3 | 功能描述:TVS 二极管 - 瞬态电压抑制器 33V 200W Powermite RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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