参数资料
| 型号： | 1PMT33AT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | TVS 200W 33V POWERMITE |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 33V |
| 电压 - 击穿： | 36.7V |
| 功率（瓦特）： | 200W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-216AA |
| 供应商设备封装： | Powermite |
| 包装： | 带卷 (TR) |
| 其它名称： | 1PMT33AT1OS |
1PMT5.0AT1G/T3G Series
MAXIMUM RATINGS
Rating
Maximum P pk Dissipation, (PW ? 10/1000 m s) (Note 1) (1PMT5.0A ? 1PMT36A)
Maximum P pk Dissipation, (PW ? 10/1000 m s) (Note 1) (1PMT40A ? 1PMT58A)
Maximum P pk Dissipation, (PW ? 8/20 m s) (Note 1)
DC Power Dissipation @ T A = 25 ° C (Note 2)
Derate above 25 ° C
Thermal Resistance, Junction ? to ? Ambient
Thermal Resistance, Junction ? to ? Lead (Anode)
Maximum DC Power Dissipation (Note 3)
Thermal Resistance, Junction ? to ? Tab (Cathode)
Operating and Storage Temperature Range
Symbol
P pk
P pk
P pk
° P D °
R q JA
R q Janode
° P D °
R q Jcathode
T J , T stg
Value
200
175
1000
500
4.0
248
35
3.2
23
? 55 to +150
Unit
W
W
W
° mW
mW/ ° C
° C/W
° C/W
W
° C/W
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse at T A = 25 ° C.
2. Mounted with recommended minimum pad size, DC board FR ? 4.
3. At Tab (Cathode) temperature, T tab = 75 ° C
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless
otherwise noted, V F = 3.5 V Max. @ I F (Note 4) = 35 A)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
I F
V F
Forward Current
Forward Voltage @ I F
http://onsemi.com
2
I PP
Uni ? Directional TVS
相关PDF资料 |
PDF描述 |
|---|---|
| 3414.0124.24 | FUSE 5A 24VDC FAST 0402 SMD |
| 1PMT36AT1 | TVS 200W 36V POWERMITE |
| TSW-129-17-S-D | CONN HEADER 58POS .100" DL GOLD |
| 1PMT28AT1 | TVS 200W 28V POWERMITE |
| AD8554AR-REEL | IC OPAMP CHOPPER R-R QUAD 14SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1PMT33AT1G | 功能描述:TVS 二极管 - 瞬态电压抑制器 33V 200W Powermite Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1PMT33AT3 | 功能描述:TVS 二极管 - 瞬态电压抑制器 33V 200W Powermite RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1PMT33AT3G | 功能描述:TVS 二极管 - 瞬态电压抑制器 33V 200W Powermite Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1PMT36AT1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 36V 200W Powermite RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1PMT36AT1G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Zener Transient Voltage Suppressor POWERMITE Package |
发布紧急采购，3分钟左右您将得到回复。