参数资料
| 型号： | 1PMT7.0AT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | TVS 200W 7.0V POWERMITE |
| 产品变化通告： | Product Obsolescence 06/Oct/2006 |
| 标准包装： | 12,000 |
| 电压 - 反向隔离（标准值）： | 7V |
| 电压 - 击穿： | 7.78V |
| 功率（瓦特）： | 200W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-216AA |
| 供应商设备封装： | Powermite |
| 包装： | 带卷 (TR) |
1PMT5.0AT1G/T3G Series
MAXIMUM RATINGS
Rating
Maximum P pk Dissipation, (PW ? 10/1000 m s) (Note 1) (1PMT5.0A ? 1PMT36A)
Maximum P pk Dissipation, (PW ? 10/1000 m s) (Note 1) (1PMT40A ? 1PMT58A)
Maximum P pk Dissipation, (PW ? 8/20 m s) (Note 1)
DC Power Dissipation @ T A = 25 ° C (Note 2)
Derate above 25 ° C
Thermal Resistance, Junction ? to ? Ambient
Thermal Resistance, Junction ? to ? Lead (Anode)
Maximum DC Power Dissipation (Note 3)
Thermal Resistance, Junction ? to ? Tab (Cathode)
Operating and Storage Temperature Range
Symbol
P pk
P pk
P pk
° P D °
R q JA
R q Janode
° P D °
R q Jcathode
T J , T stg
Value
200
175
1000
500
4.0
248
35
3.2
23
? 55 to +150
Unit
W
W
W
° mW
mW/ ° C
° C/W
° C/W
W
° C/W
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse at T A = 25 ° C.
2. Mounted with recommended minimum pad size, DC board FR ? 4.
3. At Tab (Cathode) temperature, T tab = 75 ° C
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless
otherwise noted, V F = 3.5 V Max. @ I F (Note 4) = 35 A)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
I F
V F
Forward Current
Forward Voltage @ I F
http://onsemi.com
2
I PP
Uni ? Directional TVS
相关PDF资料 |
PDF描述 |
|---|---|
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| 1PMT5.0AT3G | TVS 200W 5.0V POWERMITE |
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