参数资料
型号: 1PS79SB63
厂商: NXP SEMICONDUCTORS
元件分类: 射频混频器
英文描述: 5 V, 20 mA low Cd Schottky barrier diodes
中文描述: SILICON, MIXER DIODE
封装: ULTRA SMALL, PLASTIC, SC-79, 2 PIN
文件页数: 4/10页
文件大小: 53K
代理商: 1PS79SB63
9397 750 13846
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 02 — 3 December 2004
3 of 10
Philips Semiconductors
1PS66SB63; 1PS79SB63
5 V, 20 mA low Cd Schottky barrier diodes
5.
Limiting values
6.
Thermal characteristics
[1]
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a signicant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2]
Refer to SOT666 standard mounting conditions.
[3]
Reow soldering is the only recommended soldering method.
[4]
Refer to SOD523 (SC-79) standard mounting conditions.
7.
Characteristics
[1]
Pulse test: tp ≤ 300 s; δ≤ 0.02.
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VR
continuous reverse voltage
-
5
V
IF
continuous forward current
-
20
mA
Tj
junction temperature
-
125
°C
Tamb
ambient temperature
65
+125
°C
Tstg
storage temperature
65
+150
°C
Table 7:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
SOT666
-
700
K/W
SOD523
-
450
K/W
Table 8:
Characteristics
Tamb =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 0.1 mA
-
160
200
mV
IF = 1 mA
-
240
300
mV
IR
reverse current
VR = 1 V
-
0.4
1
A
VR = 5 V
-
50
A
Cd
diode
capacitance
VR = 0 V; f = 1 MHz;
-
0.35
0.5
pF
Ls
series inductance
-
0.6
-
nH
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