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参数资料
| 型号： | 1R5NH41 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1.5 A, 1000 V, SILICON, RECTIFIER DIODE |
| 封装： | 3-4B1A, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 217K |
| 代理商： | 1R5NH41 |
1R5NH41
2006-11-07
1
TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
1R5NH41
SWITCHING MODE POWER SUPPLY APPLICATIONS
Repetitive Peak Reverse Voltage: VRRM = 1000V
Average Forward Current: IF (AV) = 1.5A
Very Fast Reverse Recovery Time: trr = 400ns (Max)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
1000
V
Average Forward Current (Ta = 25°C)
IF (AV)
1.5
A
80 (50Hz)
Peak One Cycle Surge Forward
Current (NonRepetitive)
IFSM
88 (60Hz)
A
Junction Temperature Range
Tj
40~150
°C
Storage Temperature Range
Tstg
40~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Peak Forward Voltage
VFM
IFM = 1.5A
1.3
V
Repetitive Peak Reverse Current
IRRM
VRRM = 1000V
10
A
Reverse Recovery Time
trr
IF = 1A, di / dt = 30A / s
400
ns
Forward Recovery Time
tfr
IF = 1.0A
750
ns
Thermal Resistance
Rth (ja)
Junction to Ambient
65
°C / W
MARKING
Abbreviation Code
Part No.
1R5NH
1R5NH41
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
3-4B1A
Weight: 0.47 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1R5NH
Part No. (or abbreviation code)
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相关代理商/技术参数 |
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