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参数资料
| 型号： | 1R5NU41 |
| 元件分类： | 整流器 |
| 英文描述： | 1.5 A, 1000 V, SILICON, RECTIFIER DIODE |
| 封装： | LEAD FREE, 3-4B1A, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 225K |
| 代理商： | 1R5NU41 |
1R5NU41
2006-11-07
1
TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
1R5NU41
SWITCHING MODE POWER SUPPLY APPLICATIONS
Repetitive Peak Reverse Voltage
: VRRM = 1000V
Average Forward Current
: IF (AV) = 1.5A
Very Fast ReverseRecovery Time
: trr = 100ns
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
1000
V
Average Forward Current
IF (AV)
1.5
A
60 (50Hz)
Peak One Cycle Surge Forward
Current (NonRepetitive)
IFSM
66 (60Hz)
A
Junction Temperature Range
Tj
40~150
°C
Storage Temperature Range
Tstg
40~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Peak Forward Voltage
VFM
IFM = 2.0A
―
3.0
V
Repetitive Peak Reverse Current
IRRM
VRRM = Rated
―
100
μA
Reverse Recovery Time
trr
IF = 1A, di / dt = 30A / μs
―
100
ns
Forward Recovery Time
tfr
IF = 1.0A
―
300
―
ns
Thermal Resistance
Rth (ja)
Junction to Ambient
―
58
°C / W
Thermal Resistance
Rth (j)
Junction to Lead
―
30
°C / W
MARKING
Abbreviation Code
Part No.
1R5NU
1R5NU41
JEDEC
―
JEITA
―
TOSHIBA
34B1A
Weight: 0.47g
Unit: mm
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1R5 NU
Part No. (or abbreviation code)
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