参数资料
型号: 1S2074
厂商: Hitachi,Ltd.
英文描述: Silicon Epitaxial Planar Diode for High Speed Switching
中文描述: 硅外延平面二极管高速开关
文件页数: 2/6页
文件大小: 28K
代理商: 1S2074
1S2074(H)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
V
R
I
FM
I
FSM
*
I
O
Pd
50
V
Reverse voltage
45
V
Peak forward current
450
mA
Non-Repetitive peak forward surge current
600
mA
Average forward current
150
mA
Power dissipation
250
mW
Junction temperature
Tj
175
°
C
°
C
Storage temperature
Note:
Within 1s forward surge current.
Tstg
–65 to +175
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
I
R
C
0.64
0.8
V
I
F
= 10mA
V
R
= 30V
V
R
= 1V, f = 1MHz
I
F
= I
R
= 10mA, Irr = 1mA
Reverse current
0.1
μ
A
Capacitance
3.0
pF
Reverse recovery time
Note:
Reverse recovery time test circuit
t
rr
*
4.0
ns
3k
0.1
μ
F
Ro = 50
Rin = 50
DC
Supply
Pulse
Generator
Sampling
Oscilloscope
Trigger
相关PDF资料
PDF描述
1S2074H Silicon Epitaxial Planar Diode for High Speed Switching
1S2075 Open Relay Rack; External Height:73.37"; External Width:20.87"; External Depth:26"; Panel Space:70"; Enclosure Color:Black; Enclosure Material:Steel; Panel Width:19"; Rack U Height:40; Weight:77lb RoHS Compliant: Yes
1S2075K Silicon Epitaxial Planar Diode for High Speed Switching
1S2093 SILICON PLANAR TYPE TRIGGER DIODE
1S2095A SILICON EPITAXIAL PLANAR TYPE DIODE
相关代理商/技术参数
参数描述
1S2074(H) 制造商:未知厂家 制造商全称:未知厂家 功能描述:
1S2074H 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon Epitaxial Planar Diode for High Speed Switching
1S2075 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Diode for High Speed Switching
1S2075(K) 制造商:未知厂家 制造商全称:未知厂家 功能描述:
1S2075K 制造商:Renesas Electronics 功能描述:Diode Small Signal Switching 35V 0.1A 2-Pin DO-35