参数资料
| 型号： | 1SMA13CAT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | TVS 400W 13V BIDIRECT SMA |
| 产品变化通告： | Product Discontinuation 27/Jun/2007 |
| 标准包装： | 5,000 |
| 电压 - 反向隔离（标准值）： | 13V |
| 电压 - 击穿： | 14.4V |
| 功率（瓦特）： | 400W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AC，SMA |
| 供应商设备封装： | SMA |
| 包装： | 带卷 (TR) |
1SMA10CAT3G Series, SZ1SMA10CAT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T L = 25 ? C, Pulse Width = 1 ms
DC Power Dissipation @ T L = 75 ? C Measured Zero Lead Length (Note 2)
Derate Above 75 ? C
Thermal Resistance from Junction ? to ? Lead
DC Power Dissipation (Note 3) @ T A = 25 ? C
Derate Above 25 ? C
Thermal Resistance from Junction ? to ? Ambient
Operating and Storage Temperature Range
Symbol
P PK
P D
R q JL
P D
R q JA
T J , T stg
Value
400
1.5
20
50
0.5
4.0
250
? 65 to +150
Unit
W
W
mW/ ? C
? C/W
W
mW/ ? C
? C/W
? C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 m s, non ? repetitive.
2. 1 in square copper pad, FR ? 4 board.
3. FR ? 4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(T A = 25 ? C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
I PP
I
V C
V RWM
I R
Clamping Voltage @ I PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
I T
V C V BR V RWM I R
I R V RWM V BR V C
I T
V
V BR
Breakdown Voltage @ I T
I T
Test Current
http://onsemi.com
2
I PP
Bi ? Directional TVS
相关PDF资料 |
PDF描述 |
|---|---|
| 1SMA13AT3 | TVS 400W 13.0V UNIDIRECT SMA |
| 1SMA12AT3 | TVS 400W 5.0V UNIDIRECT SMA |
| 7-215079-6 | CONN FMALE-ON-BRD 6POS VERT T/H |
| 1-338068-6 | CONN FMALE-ON-BRD 16POS VERT T/H |
| 350761-4 | CONN HEADER 4POS VERT .250 TIN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1SMA13CAT3G | 功能描述:TVS 二极管 - 瞬态电压抑制器 13V 400W Bidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1SMA140Z | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:SURFACE MOUNT SILICON ZENER DIODE |
| 1SMA14AT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:400 Watt Peak Power Zener Transient Voltage Suppressors |
| 1SMA14AT3G | 功能描述:TVS二极管阵列 ZEN SMA TVS 400W 5.0V TR RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| 1SMA14CAT3 | 功能描述:TVS 二极管 - 瞬态电压抑制器 14V 400W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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