参数资料
| 型号： | 1SMA28CAT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | TVS 400W 28V BIDIRECT SMA |
| 标准包装： | 5,000 |
| 电压 - 反向隔离（标准值）： | 28V |
| 电压 - 击穿： | 31.1V |
| 功率（瓦特）： | 400W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AC，SMA |
| 供应商设备封装： | SMA |
| 包装： | 带卷 (TR) |
1SMA10CAT3G Series, SZ1SMA10CAT3G Series
ELECTRICAL CHARACTERISTICS
Device*
Device
Marking
V RWM
(Note 4)
Volts
I R @ V RWM
m A
Breakdown Voltage
V BR (Volts) (Note 5)
Min Nom Max
@ I T
mA
V C @ I PP
(Note 6)
V C I PP
Volts Amps
C Typ.
(Note 7)
pF
1SMA10CAT3G
1SMA11CAT3G
1SMA12CAT3G
1SMA13CAT3G
1SMA14CAT3G
1SMA15CAT3G
1SMA16CAT3G
1SMA18CAT3G
1SMA20CAT3G
1SMA24CAT3G
1SMA26CAT3G
1SMA28CAT3G
1SMA30CAT3G
1SMA33CAT3G
1SMA36CAT3G
1SMA40CAT3G
1SMA48CAT3G
1SMA51CAT3G
1SMA58CAT3G
1SMA60CAT3G
1SMA70CAT3G
1SMA78CAT3G
QXC
QZC
REC
RGC
RKC
RMC
RPC
RTC
RVC
RZC
SEC
SGC
SKC
SMC
SPC
SRC
SXC
SZC
TGC
TKC
TPC
TTC
10
11
12
13
14
15
16
18
20
24
26
28
30
33
36
40
48
51
58
60
70
78
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
11.1
12.2
13.3
14.4
15.6
16.7
17.8
20
22.2
26.7
28.9
31.1
33.3
36.7
40
44.4
53.3
56.7
64.4
66.7
77.8
86.7
11.69
12.84
14.00
15.16
16.42
17.58
18.74
21.06
23.37
28.11
30.42
32.74
35.06
38.63
42.11
46.74
56.11
59.69
67.79
70.21
81.90
91.27
12.27
13.48
14.70
15.92
17.24
18.46
19.67
22.11
24.54
29.51
31.94
34.37
36.81
40.56
44.21
49.07
58.91
62.67
71.18
73.72
85.99
95.83
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
17.0
18.2
19.9
21.5
23.2
24.4
26.0
29.2
32.4
38.9
42.1
45.4
48.4
53.3
58.1
64.5
77.4
82.4
93.6
96.8
113
126
23.5
22.0
20.1
18.6
17.2
16.4
15.4
13.7
12.3
10.3
9.5
8.8
8.3
7.5
6.9
6.2
5.2
4.9
4.3
4.1
3.5
3.2
580
530
490
455
425
400
375
335
305
260
240
225
210
190
175
160
135
130
115
110
95
90
4. A transient suppressor is normally selected according to the working peak reverse voltage (V RWM ), which should be equal to or greater than
the DC or continuous peak operating voltage level
5. V BR measured at pulse test current I T at an ambient temperature of 25 ? C
6. Surge current waveform per Figure 2 and derate per Figure 3
7. Bias voltage = 0 V, F = 1.0 MHz, T J = 25 ? C.
?Please see 1SMA5.0AT3 to 1SMA78AT3 for Unidirectional devices.
* Include SZ-prefix devices where applicable.
http://onsemi.com
3
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| 1SMA30 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:Surface Mount Glass Passivated Zener Diode |
| 1SMA30AT3 | 功能描述:TVS 二极管 - 瞬态电压抑制器 30V 400W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1SMA30AT3G | 功能描述:TVS 二极管 - 瞬态电压抑制器 30V 400W Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1SMA30CAT3 | 功能描述:TVS 二极管 - 瞬态电压抑制器 30V 400W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1SMA30CAT3G | 功能描述:TVS 二极管 - 瞬态电压抑制器 30V 400W Bidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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