参数资料
| 型号： | 1SMA30AT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | TVS 400W 30V UNIDIRECT SMA |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 5,000 |
| 电压 - 反向隔离（标准值）： | 30V |
| 电压 - 击穿： | 33.3V |
| 功率（瓦特）： | 400W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AC，SMA |
| 供应商设备封装： | SMA |
| 包装： | 带卷 (TR) |
1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series
ELECTRICAL CHARACTERISTICS
Device*
Device
Marking
V RWM
(Note 6)
Volts
I R @
V RWM
m A
Breakdown Voltage
V BR (Volts) (Note 7)
Min Nom Max
@ I T
mA
V C @ I PP
(Note 8)
V C I PP
Volts Amps
C Typ.
(Note 9)
pF
1SMA5.0AT3G
1SMA6.0AT3G
1SMA6.5AT3G
1SMA8.0AT3G
1SMA8.5AT3G
1SMA9.0AT3G
1SMA10AT3G
1SMA11AT3G
1SMA12AT3G
1SMA13AT3G
1SMA14AT3G
1SMA15AT3G
1SMA16AT3G
1SMA17AT3G
1SMA18AT3G
1SMA20AT3G
1SMA22AT3G
1SMA24AT3G
1SMA26AT3G
1SMA28AT3G
1SMA30AT3G
1SMA33AT3G
1SMA36AT3G
1SMA40AT3G
1SMA43AT3G
1SMA45AT3G
1SMA48AT3G
1SMA54AT3G
1SMA58AT3G
1SMA70AT3G
1SMA75AT3G
QE
QG
QK
QR
QT
QV
QX
QZ
RE
RG
RH
RM
RP
RR
RT
RV
RX
RZ
SE
SG
SK
SM
SP
SR
ST
SV
SX
TE
TG
TP
TR
5.0
6.0
6.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
54
58
70
75
400
400
250
25
5.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
6.4
6.67
7.22
8.89
9.44
10
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40
44.4
47.8
50
53.3
60
64.4
77.8
83.3
6.7
7.02
7.6
9.36
9.92
10.55
11.7
12.85
14.0
15.15
16.4
17.6
18.75
19.9
21.05
23.35
25.65
28.1
30.4
32.75
35.05
38.65
42.1
46.75
50.3
52.65
56.1
63.15
67.8
81.9
87.7
7.0
7.37
7.98
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
66.3
71.5
86.0
92.1
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
9.2
10.3
11.2
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.2
77.4
87.1
93.6
113
121
43.5
38.8
35.7
29.4
27.8
26.0
23.5
22.0
20.1
18.6
17.2
16.4
15.4
14.5
13.7
12.3
11.3
10.3
9.5
8.8
8.3
7.5
6.9
6.2
5.8
5.5
5.2
4.6
4.3
3.5
3.3
2035
1730
1605
1035
1265
1200
1090
1000
925
860
800
758
715
680
645
585
540
500
460
430
405
375
345
315
295
280
265
240
225
190
180
6. A transient suppressor is normally selected according to the working peak reverse voltage (V RWM ), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. V BR measured at pulse test current I T at an ambient temperature of 25 ? C.
8. Surge current waveform per Figure 2 and derate per Figure 3.
9. Bias voltage = 0 V, F = 1.0 MHz, T J = 25 ? C.
?Please see 1SMA10CAT3 to 1SMA75CAT3 for Bidirectional devices.
* Include SZ-prefix devices where applicable.
http://onsemi.com
3
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相关代理商/技术参数 |
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| 1SMA30AT3G | 功能描述:TVS 二极管 - 瞬态电压抑制器 30V 400W Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1SMA30CAT3 | 功能描述:TVS 二极管 - 瞬态电压抑制器 30V 400W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1SMA30CAT3G | 功能描述:TVS 二极管 - 瞬态电压抑制器 30V 400W Bidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1SMA33 | 制造商:TSC 制造商全称:Taiwan Semiconductor Company, Ltd 功能描述:Surface Mount Glass Passivated Zener Diode |
| 1SMA33AT3 | 功能描述:TVS 二极管 - 瞬态电压抑制器 33V 400W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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