参数资料
型号: 1SMA58AT3G
厂商: ON Semiconductor
文件页数: 2/5页
文件大小: 0K
描述: TVS 400W 58V UNIDIRECT SMA
标准包装: 5,000
电压 - 反向隔离(标准值): 58V
电压 - 击穿: 64.4V
功率(瓦特): 400W
电极标记: 单向
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: SMA
包装: 带卷 (TR)
其它名称: 1SMA58AT3G-ND
1SMA58AT3GOSTR
1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T L = 25 ? C, Pulse Width = 1 ms
DC Power Dissipation @ T L = 75 ? C Measured Zero Lead Length (Note 2)
Derate Above 75 ? C
Thermal Resistance from Junction to Lead
DC Power Dissipation (Note 3) @ T A = 25 ? C
Derate Above 25 ? C
Thermal Resistance from Junction to Ambient
Forward Surge Current (Note 4) @ T A = 25 ? C
Operating and Storage Temperature Range
Symbol
P PK
P D
R q JL
P D
R q JA
I FSM
T J , T stg
Value
400
1.5
20
50
0.5
4.0
250
40
? 65 to +150
Unit
W
W
mW/ ? C
? C/W
W
mW/ ? C
? C/W
A
? C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 m s, non ? repetitive.
2. 1 ? square copper pad, FR ? 4 board.
3. FR ? 4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T A = 25 ? C unless
otherwise noted, V F = 3.5 V Max. @ I F = 30 A for all types) (Note 5)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
I F
V F
Forward Current
Forward Voltage @ I F
I PP
5. 1/2 sine wave or equivalent, PW = 8.3 ms, non ? repetitive duty
cycle.
http://onsemi.com
2
Uni ? Directional TVS
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