参数资料
| 型号： | 1SMA58CAT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | TVS 400W 58V BIDIRECT SMA |
| 标准包装： | 5,000 |
| 电压 - 反向隔离（标准值）： | 58V |
| 电压 - 击穿： | 64.4V |
| 功率（瓦特）： | 400W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AC，SMA |
| 供应商设备封装： | SMA |
| 包装： | 带卷 (TR) |
1SMA10CAT3G Series, SZ1SMA10CAT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T L = 25 ? C, Pulse Width = 1 ms
DC Power Dissipation @ T L = 75 ? C Measured Zero Lead Length (Note 2)
Derate Above 75 ? C
Thermal Resistance from Junction ? to ? Lead
DC Power Dissipation (Note 3) @ T A = 25 ? C
Derate Above 25 ? C
Thermal Resistance from Junction ? to ? Ambient
Operating and Storage Temperature Range
Symbol
P PK
P D
R q JL
P D
R q JA
T J , T stg
Value
400
1.5
20
50
0.5
4.0
250
? 65 to +150
Unit
W
W
mW/ ? C
? C/W
W
mW/ ? C
? C/W
? C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 m s, non ? repetitive.
2. 1 in square copper pad, FR ? 4 board.
3. FR ? 4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(T A = 25 ? C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
I PP
I
V C
V RWM
I R
Clamping Voltage @ I PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
I T
V C V BR V RWM I R
I R V RWM V BR V C
I T
V
V BR
Breakdown Voltage @ I T
I T
Test Current
http://onsemi.com
2
I PP
Bi ? Directional TVS
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