参数资料
型号: 1SMB11AT3G
厂商: ON Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: TVS 600W 11V UNIDIRECT SMB
标准包装: 2,500
电压 - 反向隔离(标准值): 11V
电压 - 击穿: 12.2V
功率(瓦特): 600W
电极标记: 单向
安装类型: 表面贴装
封装/外壳: DO-214AA,SMB
供应商设备封装: SMB
包装: 带卷 (TR)
1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series
ELECTRICAL CHARACTERISTICS
Device*
Device
Marking
V RWM
(Note 6)
V
I R @ V RWM
m A
Breakdown Voltage
V BR (Note 7) Volts
Min Nom Max
@ I T
mA
V C @ I PP (Note 8)
V C I PP
V A
C typ
(Note 9)
pF
1SMB5.0AT3G
1SMB6.0AT3G
1SMB6.5AT3G
1SMB7.0AT3G
1SMB7.5AT3G
1SMB8.0AT3G
1SMB8.5AT3G
1SMB9.0AT3G
1SMB10AT3G
1SMB11AT3G
1SMB12AT3G
1SMB13AT3G
1SMB14AT3G
1SMB15AT3G
1SMB16AT3G
1SMB17AT3G
1SMB18AT3G
1SMB20AT3G
1SMB22AT3G
1SMB24AT3G
1SMB26AT3G
1SMB28AT3G
1SMB30AT3G
1SMB33AT3G
1SMB36AT3G
1SMB40AT3G
1SMB43AT3G
1SMB45AT3G
1SMB48AT3G
1SMB51AT3G
1SMB54AT3G
1SMB58AT3G
1SMB60AT3G
1SMB64AT3G
1SMB70AT3G
1SMB75AT3G
1SMB85AT3G
1SMB90AT3G
1SMB100AT3G
1SMB110AT3G
1SMB120AT3G
1SMB130AT3G
1SMB150AT3G
1SMB160AT3G
1SMB170AT3G
KE
KG
KK
KM
KP
KR
KT
KV
KX
KZ
LE
LG
LK
LM
LP
LR
LT
LV
LX
LZ
ME
MG
MK
MM
MP
MR
MT
MV
MX
MZ
NE
NG
NK
NM
NP
NR
NV
NX
NZ
PE
PG
PK
PM
PP
PR
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
85
90
100
110
120
130
150
160
170
800
800
500
500
100
50
10
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
55.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
94.4
100
111
122
133
144
167
178
189
6.7
7.02
7.6
8.19
8.77
9.36
9.92
10.55
11.7
12.85
14
15.15
16.4
17.6
18.75
19.9
21.05
23.35
25.65
28.1
30.4
32.75
35.05
38.65
42.1
46.75
50.3
52.65
56.1
59.7
63.15
67.8
70.2
74.85
81.9
87.7
99.2
105.5
117
128.5
140
151.5
176
187.5
199
7.0
7.37
7.98
8.6
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86
92.1
104
111
123
135
147
159
185
197
209
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103
113
121
137
146
162
177
193
209
243
259
275
65.2
58.3
53.6
50.0
46.5
44.1
41.7
39.0
35.3
33.0
30.2
27.9
25.8
24.0
23.1
21.7
20.5
18.5
16.9
15.4
14.2
13.2
12.4
11.3
10.3
9.3
8.6
8.3
7.7
7.3
6.9
6.4
6.2
5.8
5.3
4.9
4.4
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.2
2700
2300
2140
2005
1890
1780
1690
1605
1460
1345
1245
1160
1085
1020
965
915
870
790
730
675
630
590
555
510
470
430
400
385
365
345
330
310
300
280
260
245
220
210
190
175
160
150
135
125
120
6. A transient suppressor is normally selected according to the working peak reverse voltage (V RWM ), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. V BR measured at pulse test current I T at an ambient temperature of 25 ? C.
8. Surge current waveform per Figure 2 and derate per Figure 4 of the General Data ? 600 W at the beginning of this group.
9. Bias Voltage = 0 V, F = 1 MHz, T J = 25 ? C
?Please see 1SMB10CAT3 to 1SMB78CAT3 for Bidirectional devices.
* Include SZ-prefix devices where applicable.
http://onsemi.com
3
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