参数资料
型号: 1SMB13CAT3G
厂商: ON Semiconductor
文件页数: 3/7页
文件大小: 0K
描述: TVS 600W 13V BIDIRECT SMB
标准包装: 1
系列: *
电压 - 反向隔离(标准值): 13V
电压 - 击穿: 14.4V
功率(瓦特): 600W
电极标记: 双向
安装类型: 表面贴装
封装/外壳: DO-214AA,SMB
供应商设备封装: SMB
包装: 标准包装
其它名称: 1SMB13CAT3GOSDKR
1SMB10CAT3G Series, SZ1SMB10CAT3G Series
ELECTRICAL CHARACTERISTICS
Device *
Device
Marking
V RWM
(Note 4)
Volts
I R @ V RWM
m A
Breakdown Voltage
V BR (Note 5) Volts
Min Nom Max
@ I T
mA
V C @ I PP (Note 6)
V C I PP
Volts Amps
C typ
(Note 7)
pF
1SMB10CAT3G
1SMB11CAT3G
1SMB12CAT3G
1SMB13CAT3G
1SMB14CAT3G
1SMB15CAT3G
1SMB16CAT3G
1SMB17CAT3G
1SMB18CAT3G
1SMB20CAT3G
1SMB22CAT3G
1SMB24CAT3G
1SMB26CAT3G
1SMB28CAT3G
1SMB30CAT3G
1SMB33CAT3G
1SMB36CAT3G
1SMB40CAT3G
1SMB43CAT3G
1SMB45CAT3G
1SMB48CAT3G
1SMB51CAT3G
1SMB54CAT3G
1SMB58CAT3G
1SMB60CAT3G
1SMB64CAT3G
1SMB75CAT3G
KXC
KZC
LEC
LGC
LKC
LMC
LPC
LRC
LTC
LVC
LXC
LZC
MEC
MGC
MKC
MMC
MPC
MRC
MTC
MVC
MXC
MZC
NEC
NGC
NKC
NMC
NRC
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
75
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
83.3
11.69
12.84
14.00
15.16
16.42
17.58
18.74
19.90
21.06
23.37
25.69
28.11
30.42
32.74
35.06
38.63
42.11
46.74
50.32
52.63
56.11
59.69
63.16
67.79
70.21
74.84
91.65
12.27
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
27.0
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.32
71.18
73.72
78.58
92.07
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.2
77.4
82.4
87.1
93.6
96.8
103
121
35.3
33.0
30.2
27.9
25.8
24.0
23.1
21.7
20.5
18.5
16.9
15.4
14.2
13.2
12.4
11.3
10.3
9.3
8.6
8.3
7.7
7.3
6.9
6.4
6.2
5.8
4.9
805
740
680
630
590
555
520
490
465
425
390
366
330
310
290
265
245
220
210
200
190
175
170
155
150
145
125
4. A transient suppressor is normally selected according to the working peak reverse voltage (V RWM ), which should be equal to or greater than
the DC or continuous peak operating voltage level.
5. V BR measured at pulse test current I T at an ambient temperature of 25 ? C.
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data ? 600 Watt at the beginning of this group.
7. Bias Voltage = 0 V, F = 1 MHz, T J = 25 ? C
*Include SZ-prefix devices where applicable.
http://onsemi.com
3
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