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参数资料
| 型号： | 1SMB3EZ9.1T/R7 |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 9.1 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 341K |
| 代理商： | 1SMB3EZ9.1T/R7 |
PAGE . 3
STAD-MAR.25.2009
1
1SMB3EZ6.8~1SMB3EZ51
APPLICATION NOTE:
Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determinejunction
temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended:
Lead Temperature, T , should be determined from:
T= LA P + T
L is the lead-to-ambient thermal resistance ( C/W) and Pd is the power dissipation. The value for L will vary and depends
on the device mounting method.
L is generally 30-40 C/W for the various clips and tie points in common use and for printed
circuit board wiring.
The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of
TL, the junction temperature may be determined by:
T= T + T
T
is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses
or from Figure 10 for dc power.
T= J P
For worst-case design, using expected limits of I , limits of P and the extremes of T ( T ) may be estimated. Changes in voltage,
V , can then be found from:
V= V
T
V , the zener voltage temperature coefficient, is found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance.
For best regulation, keep current excursions as low as possible.
Data of Figure 2 should not be used to compute surge capa-bility. Surge limitations are given in Figure 3. They are lower than would
be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small
spots resulting in device degradation should the limits of Figure 3 be exceeded.
L
LD
A
JL
Z
q
D
Dq
D
Dq
D
q
O
JL
L
D
ZD
J
Z
ZJ
1
2
3
1000
500
300
200
100
50
30
20
10
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相关代理商/技术参数 |
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|---|---|
| 1SMB40 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:Zener Overvoltage Transient Suppressors |
| 1SMB40A | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:SURFACE MOUNT UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION SILICON TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS |
| 1SMB40AT3 | 功能描述:TVS 二极管 - 瞬态电压抑制器 40V 600W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1SMB40AT3G | 功能描述:TVS 二极管 - 瞬态电压抑制器 40V 600W Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1SMB40CA | 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 5.0 THRU 170 VOLTS |
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