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参数资料
| 型号： | 1SMB58CAT3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC,CASE 403A, 2 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 49K |
| 代理商： | 1SMB58CAT3 |
GENERAL DATA — 600 WATT PEAK POWER
Motorola TVS/Zener Device Data
5-3
600 Watt Peak Power Data Sheet
P
,PEAK
POWER
(kW)
P
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
tP, PULSE WIDTH
1
10
100
0.1
s1 s10 s
100
s
1 ms
10 ms
0.1
Figure 1. Pulse Rating
Curve
01
2
3
4
0
50
100
t, TIME (ms)
V
ALUE
(%)
HALF VALUE –
IRSM
2
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
OF IRSM.
PEAK VALUE – IRSM
tr
tP
tr ≤ 10 s
Figure 2. Pulse Waveform
TYPICAL PROTECTION CIRCUIT
Vin
VL
Zin
LOAD
Figure 3. Pulse Derating Curve
PEAK
PULSE
DERA
TING
IN
%
OF
PEAK
POWER
OR
CURRENT
@
T
A
=
25
C°
100
80
60
40
20
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
120
140
160
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot condition
associated with the inductance of the device and the
inductance of the connection method. The capacitive effect is
of minor importance in the parallel protection scheme because
it only produces a time delay in the transition from the
operating voltage to the clamp voltage as shown in Figure 4.
The inductive effects in the device are due to actual turn-on
time (time required for the device to go from zero current to full
current) and lead inductance. This inductive effect produces
an overshoot in the voltage across the equipment or
component being protected as shown in Figure 5. Minimizing
this overshoot is very important in the application, since the
main purpose for adding a transient suppressor is to clamp
voltage spikes. The SMB series have a very good response
time, typically < 1 ns and negligible inductance. However,
external inductive effects could produce unacceptable over-
shoot. Proper circuit layout, minimum lead lengths and placing
the suppressor device as close as possible to the equipment
or components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25
°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves of
Figure 6. Average power must be derated as the lead or
ambient temperature rises above 25
°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 6 appear to be in
error as the 10 ms pulse has a higher derating factor than the
10
s pulse. However, when the derating factor for a given
pulse of Figure 6 is multiplied by the peak power value of
Figure 1 for the same pulse, the results follow the expected
trend.
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相关代理商/技术参数 |
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|---|---|
| 1SMB58CAT3G | 功能描述:TVS 二极管 - 瞬态电压抑制器 58V 600W Bidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| 1SMB5913 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:PLASTIC SURFACE MOUNT ZENER DIODES 3 WATTS 3.3.200 VOLTS |
| 1SMB5913A | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:1.5Watt Plastic Surface Mount Silicon Zener Diodes |
| 1SMB5913A_05 | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SILICON ZENER DIODES |
| 1SMB5913B | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SILICON ZENER DIODES |
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