参数资料
| 型号： | 1SMB58CAT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | TVS 600W 58V BIDIRECT SMB |
| 标准包装： | 1 |
| 系列： | * |
| 电压 - 反向隔离（标准值）： | 58V |
| 电压 - 击穿： | 64.4V |
| 功率（瓦特）： | 600W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | SMB |
| 包装： | 标准包装 |
| 其它名称： | 1SMB58CAT3GOSDKR |
1SMB10CAT3G Series, SZ1SMB10CAT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T L = 25 ? C, Pulse Width = 1 ms
DC Power Dissipation @ T L = 75 ? C Measured Zero Lead Length (Note 2)
Derate Above 75 ? C
Thermal Resistance from Junction ? to ? Lead
DC Power Dissipation (Note 3) @ T A = 25 ? C
Derate Above 25 ? C
Thermal Resistance from Junction ? to ? Ambient
Operating and Storage Temperature Range
Symbol
P PK
P D
R q JL
P D
R q JA
T J , T stg
Value
600
3.0
40
25
0.55
4.4
226
? 65 to +150
Unit
W
W
mW/ ? C
? C/W
W
mW/ ? C
? C/W
? C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 m s, non ? repetitive
2. 1 ? square copper pad, FR ? 4 board
3. FR ? 4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices
ELECTRICAL CHARACTERISTICS
(T A = 25 ? C unless otherwise noted)
Symbol
Parameter
I PP
I
I PP
V C
V RWM
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
Working Peak Reverse Voltage
I T
V C V BR V RWM I R
I R V RWM V BR V C
I T
V
I R
Maximum Reverse Leakage Current @ V RWM
V BR
I T
Breakdown Voltage @ I T
Test Current
http://onsemi.com
2
I PP
Bi ? Directional TVS
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相关代理商/技术参数 |
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| 1SMB5913 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:PLASTIC SURFACE MOUNT ZENER DIODES 3 WATTS 3.3.200 VOLTS |
| 1SMB5913A | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:1.5Watt Plastic Surface Mount Silicon Zener Diodes |
| 1SMB5913A_05 | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SILICON ZENER DIODES |
| 1SMB5913B | 制造商:EIC 制造商全称:EIC discrete Semiconductors 功能描述:SILICON ZENER DIODES |
| 1SMB5913BT3 | 功能描述:稳压二极管 3.3V 3W RoHS:否 制造商:Vishay Semiconductors 齐纳电压:12 V 电压容差:5 % 电压温度系数:0.075 % / K 齐纳电流: 功率耗散:3 W 最大反向漏泄电流:3 uA 最大齐纳阻抗:7 Ohms 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AC 封装:Reel |
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