参数资料
型号: 1SS196
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.1 A, SILICON, SIGNAL DIODE
封装: SC-59, TO-236MOD, 3 PIN
文件页数: 1/3页
文件大小: 151K
代理商: 1SS196
1SS196
2001-06-07
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS196
Ultra High Speed Switching Application
Small package
: SC-59
Low forward voltage
: VF (3) = 0.9V (typ.)
Fast reverse recovery time: trr = 1.6ns (typ.)
Small total capacitance
: CT = 0.9pF (typ.)
Maximum Ratings (Ta = 25
°°°°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
300
mA
Average forward current
IO
100
mA
Surge current (10ms)
IFSM
2
A
Power dissipation
P
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55
125
°C
Electrical Characteristics (Ta = 25
°°°°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
IF = 1mA
0.60
VF (2)
IF = 10mA
0.72
Forward voltage
VF (3)
IF = 100mA
0.90
1.20
V
IR (1)
VR = 30V
0.1
Reverse current
IR (2)
VR = 80V
0.5
A
Total capacitance
CT
VR = 0, f = 1MHz
0.9
3.0
pF
Reverse recovery time
trr
IF = 10mA (Fig.1)
1.6
4.0
ns
Marking
JEDEC
TO-236MOD
EIAJ
SC-59
TOSHIBA
1-3G1B
Weight: 0.012g
Unit: mm
相关PDF资料
PDF描述
1SS199RY SILICON, MIXER DIODE, DO-34
1SS200 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
1SS201 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
1SS220-T1B 0.1 A, SILICON, SIGNAL DIODE
1SS221-L 0.1 A, SILICON, SIGNAL DIODE
相关代理商/技术参数
参数描述
1SS196(TE85L,F) 制造商:Toshiba 功能描述:Cut Tape 制造商:Toshiba America Electronic Components 功能描述:Diode, switching, fast, S-MINI(SC-59), 1
1SS196_07 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Ultra High Speed Switching Application
1SS196_13 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:150mW Switching Diodes
1SS196T5LT 制造商:Toshiba America Electronic Components 功能描述:ULTRA FAST RECOVERY RECTFR 85V 0.1A 3PIN S-MINI - Tape and Reel
1SS198 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Schottky Barrier Diode for Various Detector, High Speed Switching