- 您现在的位置：买卖IC网 > PDF目录91044 > 1SS250 0.1 A, 200 V, SILICON, SIGNAL DIODE PDF资料下载
参数资料
| 型号： | 1SS250 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.1 A, 200 V, SILICON, SIGNAL DIODE |
| 封装： | 1-3G1B, S-MINI, SC-59, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 179K |
| 代理商： | 1SS250 |
1SS250
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS250
Ultra High Speed Switching Application
Low forward voltage
: VF (2) = 0.90V (typ.)
Fast reverse recovery time: trr = 60ns (max)
Small total capacitance
: CT = 1.5pF (typ.)
Small package
: SC59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Peak reverse voltage
VRM
250
V
Reverse voltage
VR
200
V
Peak forward current
IFM
300
mA
Average forward current
IO
100
mA
Surge current (10 ms)
IFSM
2
A
Power dissipation
P
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
―
IF = 10mA
―
0.72
1.00
Forward voltage
VF (2)
―
IF = 100mA
―
0.90
1.20
V
IR (1)
―
VR = 50V
―
0.1
Reverse current
IR (2)
―
VR = 200V
―
1.0
μA
Total capacitance
CT
―
VR = 0, f = 1MHz
―
1.5
3.0
pF
Reverse recovery time
trr
―
IF = 10mA (Fig.1)
―
10
60
ns
Fig.1 Reverse recovery time (trr) test circuit
Marking
JEDEC
JEITA
SC59
TOSHIBA
13G1B
Weight: 0.012g (typ.)
Unit: mm
相关PDF资料 |
PDF描述 |
|---|---|
| 1SS252T-73 | 0.13 A, 90 V, SILICON, SIGNAL DIODE |
| 1SS265T-72 | SILICON, VHF-UHF BAND, MIXER DIODE |
| 1SS265T-77 | SILICON, VHF-UHF BAND, MIXER DIODE |
| 1SS265T-82 | 0.1 A, SILICON, SIGNAL DIODE |
| 1SS265UH02 | SILICON, VHF-UHF BAND, MIXER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1SS250(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:X34 PB-F S-MINI SW DIODE (LF), PD=150MW IFM=300MA - Tape and Reel 制造商:Toshiba 功能描述:Diode Switching 250V 0.1A 3-Pin SMini T/R 制造商:Toshiba America Electronic Components 功能描述:Diode,Sw,200V/0.1A,Single,trr=30ns,SC-59 制造商:Toshiba America Electronic Components 功能描述:Diode, switching, fast, S-MINI(SC-59), |
| 1SS250T5LFT | 功能描述:二极管 - 通用，功率，开关 Diode RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| 1SS250T5LT | 制造商:Toshiba America Electronic Components 功能描述:ULTRA FAST RECOVERY RECTFR 250V 0.1A 3PIN S-MINI - Tape and Reel |
| 1SS250TE85L | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA Diode Silicon Epitaxial Planar Type |
| 1SS254 | 制造商:Panasonic Industrial Company 功能描述:DIODE SUB: RVD1SS133TA |
发布紧急采购，3分钟左右您将得到回复。