参数资料
型号: 1SS362
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.08 A, 2 ELEMENT, SILICON, SIGNAL DIODE
封装: 1-2S1C, 3 PIN
文件页数: 1/2页
文件大小: 148K
代理商: 1SS362
1SS362
2001-06-07
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS362
Ultra High Speed Switching Application
Small package
Low forward voltage
: VF = 0.97V (typ.)
Fast reverse recovery time: trr = 1.6ns (typ.)
Small total capacitance
: CT = 0.5pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
240 *
mA
Average forward current
IO
80 *
mA
Surge current (10ms)
IFSM
1 *
A
Power dissipation
P
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55
125
°C
* Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
IF = 1mA
0.63
VF (2)
IF = 10mA
0.75
Forward voltage
VF (3)
IF = 100mA
0.97
1.20
V
IR (1)
VR = 30V
0.1
Reverse current
IR (2)
VR = 80V
0.5
A
Total capacitance
CT
VR = 0, f = 1MHz
0.5
3.0
pF
Reverse recovery time
trr
IF = 10mA, Fig.1
1.6
4.0
ns
Marking
JEDEC
EIAJ
TOSHIBA
1-2S1C
Weight: 2.4mg
Unit: mm
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