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参数资料
| 型号： | 1SS383T2G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | CASE 900AA-01, SC-82, 4 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 26K |
| 代理商： | 1SS383T2G |
Semiconductor Components Industries, LLC, 2004
January, 2004 Rev. 1
1
Publication Order Number:
1SS383T1G/D
1SS383T1G, 1SS383T2G
Preferred Device
Dual Schottky Diode
Dual 40 V, 300 mA Low VF Schottky Diodes in 4lead SC82
package.
Features
Low Forward Voltage: V
F = 0.48 V (typ) @ IF = 100 mA
Low Reverse Current: I
R = 5
mA (max)
PbFree Package May be Available. The GSuffix Denotes a
PbFree Lead Finish
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
VR
40
V
Maximum Peak Forward Current*
IFM
300
mA
Peak Forward Surge Current
Pulse Width = 10
ms
IFM(surge)
500
mA
*Both Devices Active
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
THERMAL CHARACTERISTICS
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD
200
(Note 1)
1.6
(Note 1)
mW
mW/
°C
Thermal Resistance Junction-to-Ambient
RqJA
625
(Note 1)
°C/W
Junction and Storage Temperature
TJ, Tstg
55 to
+150
°C
1. FR4 @ Minimum Pad.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 100 mA)
VF
280
360
540
600
mV
Reverse Current
(VR = 40 V)
IR
5
mA
Capacitance
(VR = 0, f = 1.0 MHz)
CD
25
pF
http://onsemi.com
Preferred devices are recommended choices for future use
and best overall value.
2
1
SC82
CASE 900AA
AE = Specific Device Code
D
= Date Code
MARKING DIAGRAM
AE D
Device
Package
Shipping
ORDERING INFORMATION
1SS383T1G
SC82
4 mm pitch
3000/Tape & Reel
3
4
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1SS383T2G
SC82
4 mm pitch
3000/Tape & Reel
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相关代理商/技术参数 |
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|---|---|
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