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参数资料
| 型号： | 1SS396 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.1 A, 45 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | 1-3G1G, S-MINI, SC-59, TO-236MOD, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 177K |
| 代理商： | 1SS396 |
1SS396
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS396
Low Voltage High Speed Switching
Low forward voltage
: VF (3) = 0.54V (typ.)
Low reverse current
: IR = 5μA (max.)
Small package
: SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
45
V
Reverse voltage
VR
40
V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
1 *
A
Power dissipation
P
150 *
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55
125
°C
Operating temperature range
Topr
40
100
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
VF (1)
―
IF = 1mA
―
0.28
―
VF (2)
―
IF = 10mA
―
0.36
―
Forward voltage
VF (3)
―
IF = 100mA
―
0.54
0.60
V
Reverse current
IR
―
VR = 40V
―
5
μA
Total capacitance
CT
―
VR = 0, f = 1MHz
―
18
25
pF
Marking
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
1-3G1G
Weight: 0.012g (typ.)
Unit: mm
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1SS396(T5LFT) | 功能描述:肖特基二极管与整流器 DIODE (S-MINI) DIODE-SMALL SIGNAL RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| 1SS396(TE85L,F) | 制造商:Toshiba 功能描述:Diode Small Signal Schottky 45V 0.1A 3-Pin SMini T/R 制造商:Toshiba America Electronic Components 功能描述:Diode, schottky, fast, low drop, S-MINI( 制造商:Toshiba America Electronic Components 功能描述:Diode,Shottky,Barirre |
| 1SS396,LF | 功能描述:DIODE SCHOTKY 40V 70MA SMINI 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:新产品 二极管配置:1 对串联 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:40V 电流 - 平均整流（Io）（每二极管）:70mA 不同 If 时的电压 - 正向（Vf）:360mV @ 10mA 速度:小信号 =< 200mA（Io），任意速度 反向恢复时间（trr）:- 不同?Vr 时的电流 - 反向漏电流:5μA @ 40V 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:S-Mini 标准包装:1 |
| 1SS396_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Low Voltage High Speed Switching |
| 1SS397 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS) |
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