参数资料
型号: 1SV231
元件分类: 变容二极管
英文描述: 45 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
封装: 1-1E1A, 2 PIN
文件页数: 1/3页
文件大小: 119K
代理商: 1SV231
1SV231
2003-04-02
1
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV231
CATV Tuning
High capacitance ratio: C2 V/C25 V = 15 (typ.)
Excellent C-V characteristics, and small tracking error.
Useful for small size tuner.
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Peak reverse voltage
VRM
35 (RL = 10 kW)V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 mA
30
V
Reverse current
IR
VR = 28 V
10
nA
Capacitance
C2 V
VR = 2 V, f = 1 MHz
41.0
45.0
49.5
pF
Capacitance
C25 V
VR = 25 V, f = 1 MHz
2.7
3.0
3.4
pF
Capacitance ratio
C2 V/C25 V
14
15
Series resistance
rs
VR = 5 V, f = 470 MHz
1.05
1.25
W
Note 1: Available in matched group for capacitance to 2.5%.
(min)
C
(min)
C
(max)
C
-
<= 0.025
(VR = 2~25 V)
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
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