参数资料
型号: 20CTH03FPPBF
厂商: Vishay Semiconductors
文件页数: 1/9页
文件大小: 191K
描述: DIODE FAST REC 300V 10A TO220FP
标准包装: 1,000
系列: FRED Pt™
电压 - 在 If 时为正向 (Vf)(最大): 1.25V @ 10A
电流 - 在 Vr 时反向漏电: 20µA @ 300V
电流 - 平均整流 (Io)(每个二极管): 10A
电压 - (Vr)(最大): 300V
反向恢复时间(trr): 35ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3 整包
供应商设备封装: TO-220 整包
包装: 管件
VS-20CTH03PbF, VS-20CTH03-N3, VS-20CTH03FPPbF, VS-20CTH03FP-N3
www.vishay.com
Vishay Semiconductors
Revision: 25-Jun-12
1
Document Number: 94010
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 2 x 10 A FRED Pt?
FEATURES
? Hyperfast recovery time
? Low forward voltage drop
? 175 °C operating junction temperature
? Low leakage current
? Fully isolated package (VINS
= 2500 V
RMS)
? UL E78996 pending
? Designed and qualified according to
JEDEC-JESD47
? Material categorization: For
definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-220AB, TO-220FP
IF(AV)
2 x 10 A
VR
300 V
VF
at I
F
1.25 V
trr
typ. See Recovery table
TJ
max. 175 °C
Diode variation Common cathode
TO-220AB
TO-220 FULL-PAK
VS-20CTH03PbF VS-20CTH03FPPbF
VS-20CTH03-N3 VS-20CTH03FP-N3
cathode
3
Anode
Anode
1
Common2
Base
common
cathode
2
cathode
3
Anode
Anode
1
Common2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage VRRM
300 V
Average rectified forward current
per diode
(FULL-PAK) per diode TIF(AV)
C
= 135 °C
TC
= 160 °C
10
A
per device 20
Non-repetitive peak surge current IFSM
TJ
= 25 °C 120
Operating junction and storage temperatures TJ, TStg
- 65 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VR
IR
= 100 μA 300 - -
V
Forward voltage VF
IF
= 10 A - 1.05 1.25
IF
= 10 A, T
J
= 125 °C - 0.85 0.95
Reverse leakage current IR
VR
= V
R
rated - - 20
μA
TJ
= 125 °C, V
R
= V
R
rated - 6 200
Junction capacitance CT
VR
= 300 V - 30 - pF
Series inductance LS
Measured lead to lead 5 mm from package body - 8 - nH
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