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参数资料
| 型号： | 20MT120UFPBF |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 40 A, 1200 V, N-CHANNEL IGBT |
| 封装： | MTP, 18 PIN |
| 文件页数： | 6/13页 |
| 文件大小： | 699K |
| 代理商： | 20MT120UFPBF |
2
20MT120UF
I27124 rev. D 02/03
www.irf.com
V(BR)CES
Collector-to-Emitter Breakdown Voltage 1200
V
VGE = 0V, IC = 250A
V(BR)CES/ Temperature Coeff. of
+1.3
V/°C
VGE = 0V, IC = 3mA (25-125°C)
TJ
Breakdown Voltage
VCE(ON)
Collector-to-Emitter Saturation Voltage
3.29
3.59
V
VGE = 15V, IC = 20A
4.42
4.66
VGE = 15V, IC = 40A
3.87
4.11
VGE = 15V, IC = 20A TJ = 125°C
5.32
5.70
VGE = 15V, IC = 40A TJ = 125°C
3.99
4.27
VGE = 15V, IC = 20A TJ = 150°C
VGE(th)
Gate Threshold Voltage
4
6
V
VCE = VGE, IC = 250A
VGE(th)/ Temperature Coeff. of
-14
mV/°C VCE = VGE, IC = 3mA (25-125°C)
TJ
Threshold Voltage
gfe
Transconductance
17.5
S
VCE = 50V, IC = 20A, PW = 80s
ICES
Zero Gate Voltage Collector Current (1)
250
A
VGE = 0V, VCE = 1200V, TJ = 25°C
0.7
3.0
mA
VGE = 0V, VCE = 1200V, TJ = 125°C
2.9
9.0
VGE = 0V, VCE = 1200V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
±250
nA
VGE = ± 20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Qg
Total Gate Charge (turn-on)
176
264
nC
IC = 20A
Qge
Gate-Emitter Charge (turn-on)
19
30
VCC = 600V
Qgc
Gate-Collector Charge (turn-on)
89
134
VGE = 15V
Eon
Turn-On Switching Loss
513
770
J
VCC = 600V, IC = 20A
Eoff
Turn-Off Switching Loss
402
603
VGE = 15V, Rg = 5
, L = 200H
Etot
Total Switching Loss
915
1373
TJ = 25°C, Energy losses include tail
and diode reverse recovery
Eon
Turn-On Switching Loss
930
1395
J
VCC = 600V, IC = 20A
Eoff
Turn-Off Switching Loss
610
915
VGE = 15V, Rg = 5
, L = 200H
Etot
Total Switching Loss
1540
2310
TJ = 125°C, Energy losses include tail
and diode reverse recovery
Cies
Input Capacitance
2530
3790
pF
VGE = 0V
Coes
Output Capacitance
344
516
VCC = 30V
Cres
Reverse Transfer Capacitance
78
117
f = 1.0 MHz
RBSOA
Reverse Bias Safe Operating Area
full square
TJ = 150°C, IC = 120A
VCC = 1000V, Vp = 1200V
Rg = 5
, VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
10
s
TJ = 150°C
VCC = 900V, Vp = 1200V
Rg = 5
, VGE = +15V to 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
(1)
I CES includes also opposite leg overall leakage
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