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参数资料
| 型号： | 20N60B |
| 厂商： | IXYS Corporation |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | HiPerFAST IGBT的 |
| 文件页数： | 2/4页 |
| 文件大小： | 114K |
| 代理商： | 20N60B |
2 - 4
2000 IXYS All rights reserved
Inductive load, T
J
= 25 C
I
C
= I
, V
GE
= 15 V, L = 100 H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Inductive load, T
J
= 125 C
I
C
= I
C90
, V
GE
= 15 V, L = 100 H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Note 1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t 300 s, duty cycle 2 %
= I
; V
= 10 V,
9
17
S
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
1500
175
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
40
90
11
30
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
15
35
ns
ns
mJ
ns
ns
mJ
0.15
150
100
0.7
200
150
1.0
Note 1
15
35
ns
ns
mJ
ns
ns
mJ
0.15
220
140
1.2
R
thJC
R
thCK
0.83 K/W
0.25
K/W
Note 1: Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
IXGH 20N60B
IXGT 20N60B
TO-247 AD (IXGH) Outline
Dim. Millimeter
Min.
Inches
Min.
Max.
Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55
0.610 0.640
0.140 0.144
3.65
E
F
4.32
5.4
5.49
6.2
0.170 0.216
0.212 0.244
G
H
1.65
2.13
4.5
0.065 0.084
-
-
0.177
J
K
1.0
10.8
1.4
11.0
0.040 0.055
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5
2.49
0.087 0.102
Dim.
Millimeter
Min.
4.9
2.7
.02
1.15
1.9
.4
13.80
15.85
13.3
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
L1
1.20
1.40
L2
1.00
1.15
L3 0.25 BSC .010 BSC
L4
3.80
4.10
Inches
Min.
.193
.106
.001
.045
.75
.016
.543
.624
.524
Max.
5.1
2.9
.25
1.45
2.1
.65
14.00
16.05
13.6
Max.
.201
.114
.010
.057
.83
.026
.551
.632
.535
A
A
1
A
2
b
b
2
C
D
E
E
1
.736
.094
.047
.039
.752
.106
.055
.045
.150
.161
TO-268AA (D
3
PAK)
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 20N60BD1 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFAST IGBT with Diode |
| 20N60G-T3P-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:20A, 600V N-CHANNEL POWER MOSFET |
| 20N60G-T47-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:20A, 600V N-CHANNEL POWER MOSFET |
| 20N60L-T3P-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:20A, 600V N-CHANNEL POWER MOSFET |
| 20N60L-T47-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:20A, 600V N-CHANNEL POWER MOSFET |
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