参数资料
型号: 22921C1
英文描述: Migrating between Flash Device Densities
中文描述: 迁移之间的Flash器件密度
文件页数: 9/17页
文件大小: 125K
代理商: 22921C1
16
Migrating Between Flash Device Densities
REVISION SUMMARY
Revision B (September 10, 1999)
Added the ball grid array column to both FBGA
diagrams.
Revision C (October 5, 2000)
Globally changed process technology designators in
part number as required to reflect current product
offerings.
Added 1.8 V Am29DS simultaneous read/write devices
to 48-pin TSOP illustration. Added 40-pin to 48-pin mi-
gration to 40-pin TSOP illustration. Added 1.8 V
Am29SL and Am29DS devices to 48-/63-ball FBGA
illustration.
Added illustrations for 47- & 48-
Ball FBGA, Am29BDS devices, 44-pin SO to 56-pin SO
3 V devices, and 56-pin SO: 3 V burst mode devices.
Revision C+1 (November 30, 2000)
Updated the following two diagrams to include VIO for
Am29LV065 devices:
40-Pin & 40- to 48-Pin TSOP: 3 V x8-only Devices
48- or 63-Ball FBGA: 3 V X8-only Devices
Trademarks
Copyright 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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229-2-1REC4-28249-1 制造商:Sensata Technologies 功能描述:2 Pole
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