参数资料
| 型号： | 23A640T-I/ST |
| 厂商： | Microchip Technology |
| 文件页数： | 2/24页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 64KBIT 20MHZ 8TSSOP |
| 产品培训模块： | 23x640 and 23x256 SRAM Overview |
| 标准包装： | 2,500 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM |
| 存储容量： | 64K (8K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 串行 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP |
| 包装： | 带卷 (TR) |
23A640/23K640
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (?)
V CC .............................................................................................................................................................................4.5V
All inputs and outputs w.r.t. V SS ......................................................................................................... -0.3V to V CC +0.3V
Storage temperature .................................................................................................................................-40°C to 125°C
Ambient temperature under bias .................................................................................................................-40°C to 85°C
ESD protection on all pins ...........................................................................................................................................2kV
? NOTICE : Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
DC CHARACTERISTICS
Industrial (I):
T A = -40°C to +85°C
Param.
No.
D001
D001
D002
Sym.
V CC
V CC
V IH
Characteristic
Supply voltage
Supply voltage
High-level input
Min.
1.7
2.7
.7 V CC
Typ (1)
—
—
—
Max.
1.95
3.6
V CC
Units
V
V
V
23A640
23K640
Test Conditions
voltage
+0.3
D003
V IL
Low-level input
-0.3
—
0.2xV CC
V
voltage
D004
V OL
Low-level output
—
—
0.2
V
I OL = 1 mA
voltage
D005
V OH
High-level output
V CC -0.5
—
—
V
I OH = -400 μ A
voltage
D006
I LI
Input leakage
—
—
±0.5
μ A
CS = V CC , V IN = V SS OR V CC
current
D007
I LO
Output leakage
—
—
±0.5
μ A
CS = V CC , V OUT = V SS OR V CC
current
D008
D009
I CC Read
I CCS
Operating current
—
—
—
—
—
—
—
200
3
6
10
500
mA
mA
mA
nA
F CLK = 1 MHz; SO = O
F CLK = 10 MHz; SO = O
F CLK = 20 MHz; SO = O
CS = V CC = 1.8V, Inputs tied to V CC
Standby current
or V SS
—
1
4
μ A
CS = V CC = 3.0V, Inputs tied to V CC
or V SS
D010
C INT
Input capacitance
7
pF
V CC = 0V, f = 1 MHz, Ta = 25°C
(Note 1)
D011
V DR
RAM data retention
—
1.2
—
V
voltage (2)
Note 1:
2:
This parameter is periodically sampled and not 100% tested. Typical measurements taken at room
temperature (25°C).
This is the limit to which V DD can be lowered without losing RAM data. This parameter is periodically
sampled and not 100% tested.
DS22126B-page 2
Preliminary
? 2009 Microchip Technology Inc.
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