参数资料
| 型号： | 25AA1024-I/P |
| 厂商： | Microchip Technology |
| 文件页数： | 19/34页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 1MBIT 20MHZ 8DIP |
| 标准包装： | 60 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1M (128K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 1450 (CN2011-ZH PDF) |
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25AA1024
2.12
RELEASE FROM DEEP POWER-
DOWN AND READ ELECTRONIC
SIGNATURE
Release from Deep Power-Down mode and Read
Electronic Signature is entered by driving CS low,
followed by the RDID instruction code (Figure 2-12)
and then a dummy address of 24 bits (A23-A0). After
Once the device has entered Deep Power-Down
mode all instructions are ignored except the release
from Deep Power-down and Read Electronic Signa-
ture command. This command can also be used when
the device is not in Deep Power-down, to read the
electronic signature out on the SO pin unless another
command is being executed such as Erase, Program
or Write STATUS register.
the last bit of the dummy address is clocked in, the
8-bit Electronic signature is clocked out on the SO
pin.
After the signature has been read out at least once,
the sequence can be terminated by driving CS high.
The device will then return to Standby mode and will
wait to be selected so it can be given new instructions.
If additional clock cycles are sent after the electronic
signature has been read once, it will continue to output
the signature on the SO line until the sequence is
terminated.
FIGURE 2-12:
CS
RELEASE FROM DEEP POWER-DOWN AND READ ELECTRONIC SIGNATURE
0
1
2
3
4
5
6
7
8
9 1 0 11
2 9 3 0 3 1 3 2 3 3 3 4 3 5 3 6 3 7 3 8 3 9
SCK
Instruction
24-bit Address
SI
1
0
1
0
1
0
1
1 23 22 21 20
2
1
0
High-Impedance
Electronic Signature Out
SO
7
0
6
0
5
1
4
0
3
1
2
0
1
0
0
1
Manufacturers ID 0x29
Driving CS high after the 8-bit RDID command, but before the Electronic Signature has been transmitted, will still
ensure the device will be taken out of Deep Power-Down mode. However, there is a delay T REL that occurs before the
device returns to Standby mode (I CCS ), as shown in Figure 2-13.
FIGURE 2-13:
CS
RELEASE FROM DEEP POWER-DOWN AND READ ELECTRONIC SIGNATURE
0
1
2
3
4
5
6
7
T REL
SCK
Instruction
SI
1
0
1
0
1
0
1
1
High-Impedance
SO
? 2010 Microchip Technology Inc.
DS21836H-page 19
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 25AA1024T-E/MF | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1 Mbit SPI Bus Serial EEPROM |
| 25AA1024T-E/P | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1 Mbit SPI Bus Serial EEPROM |
| 25AA1024T-E/SM | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1 Mbit SPI Bus Serial EEPROM |
| 25AA1024T-I/MF | 功能描述:电可擦除可编程只读存储器 128kx8 - 1.8V RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 25AA1024T-I/P | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:1 Mbit SPI Bus Serial EEPROM |
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