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| 型号： | 25AA1024T-I/MF |
| 厂商： | Microchip Technology |
| 文件页数： | 2/34页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 1MBIT 20MHZ 8DFN |
| 标准包装： | 3,300 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1M (128K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-S（6x5） |
| 包装： | 带卷 (TR) |
| 其它名称： | 25AA1024T-I/MFTR |
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25AA1024
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (?)
V CC .............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V SS ......................................................................................................... -0.6V to V CC +1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
? NOTICE : Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I)*: T A = 0°C to +85°C
V CC = 1.8V to 5.5V
DC CHARACTERISTICS
Industrial (I): T A = -40°C to +85°C
* Limited industrial temp range.
V CC = 2.0V to 5.5V
Param.
No.
D001
Sym.
V IH1
Characteristic
High-level input
Min.
.7 V CC
Max.
V CC +1
Units
V
Test Conditions
voltage
D002
D003
D004
D005
D006
V IL1
V IL2
V OL
V OL
V OH
Low-level input
voltage
Low-level output
voltage
High-level output
-0.3
-0.3
—
—
V CC -0.2
0.3 V CC
0.2 V CC
0.4
0.2
—
V
V
V
V
V
V CC ??? 2.7V
V CC < 2.7V
I OL = 2.1 mA
I OL = 1.0 mA, V CC < 2.5V
I OH = -400 ? A
voltage
D007
D008
I LI
I LO
Input leakage current
Output leakage
—
—
±1
±1
? A
? A
CS = V CC , V IN = V SS TO V CC
CS = V CC , V OUT = V SS TO V CC
current
D009
C INT
Internal capacitance
—
7
pF
T A = 25°C, CLK = 1.0 MHz,
(all inputs and
outputs)
V CC = 5.0V (Note)
D010
I CC Read
—
10
mA
V CC = 5.5V; F CLK = 20.0 MHz;
—
SO = Open
Operating current
5
mA
V CC = 2.5V; F CLK = 10.0 MHz;
SO = Open
D011
I CC Write
—
—
7
5
mA
mA
V CC = 5.5V
V CC = 2.5V
D012
I CCS
Standby current
—
12
? A
CS = V CC = 5.5V, Inputs tied to V CC or
V SS , 85°C
D13
I CCSPD
Deep power-down
—
1
? A
CS = V CC = 2.5V, Inputs tied to V CC or
current
V SS , 85°C
Note:
This parameter is periodically sampled and not 100% tested.
DS21836H-page 2
? 2010 Microchip Technology Inc.
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