参数资料
型号: 25AA160-I/SN
元件分类: PROM
英文描述: 2K X 8 SPI BUS SERIAL EEPROM, PDSO8
封装: 0.150 INCH, PLASTIC, MS-012, SOIC-8
文件页数: 3/22页
文件大小: 335K
代理商: 25AA160-I/SN
2004 Microchip Technology Inc.
DS21231D-page 11
25AA160/25LC160/25C160
FIGURE 3-7:
WRITE STATUS REGISTER TIMING SEQUENCE
3.7
Data Protection
The following protection has been implemented to
prevent inadvertent writes to the array:
The write enable latch is reset on power-up
A WRITE ENABLE instruction must be issued to
set the write enable latch
After a byte write, page write, or Status register
write, the write enable latch is reset
CS must be set high after the proper number of
clock cycles to start an internal write cycle
Access to the array during an internal write cycle
is ignored and programming is continued
3.8
Power On State
The 25XX160 powers on in the following state:
The device is in low power Standby mode (CS = 1)
The write enable latch is reset
SO is in high-impedance state
A low level on CS is required to enter active state
TABLE 3-3:
WRITE-PROTECT FUNCTIONALITY MATRIX
SO
SI
CS
9
1011
12131415
01
0
00
765
4
21
0
instruction
data to Status register
High-impedance
SCK
0
234567
18
3
WPEN
WP
WEL
Protected Blocks
Unprotected Blocks
Status Register
XX
0
Protected
0X
1
Protected
Writable
1
Low
1
Protected
Writable
Protected
X
High
1
Protected
Writable
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