参数资料
型号: 25AA512-I/SN
厂商: Microchip Technology
文件页数: 15/36页
文件大小: 0K
描述: IC EEPROM 512KBIT 20MHZ 8SOIC
标准包装: 100
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 512K (64K x 8)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 管件
产品目录页面: 1450 (CN2011-ZH PDF)
25AA512
2.8
PAGE ERASE
The PAGE ERASE instruction will erase all bits (FFh)
inside the given page. A Write Enable ( WREN ) instruc-
tion must be given prior to attempting a PAGE ERASE .
This is done by setting CS low and then clocking out
the proper instruction into the 25AA512. After all eight
bits of the instruction are transmitted, the CS must be
brought high to set the write enable latch.
The PAGE ERASE instruction is entered by driving CS
low, followed by the instruction code (Figure 2-8) and
two address bytes. Any address inside the page to be
erased is a valid address.
CS must then be driven high after the last bit of the
address or the PAGE ERASE will not execute. Once
the CS is driven high the self-timed PAGE ERASE
cycle is started. The WIP bit in the STATUS register
can be read to determine when the PAGE ERASE cycle
is complete.
If a PAGE ERASE instruction is given to an address
that has been protected by the Block Protect bits (BP0,
BP1) then the sequence will be aborted and no erase
will occur.
FIGURE 2-8:
CS
PAGE ERASE SEQUENCE
0
1
2
3
4
5
6
7
8
9 1 0 11
2 1 2 2 2 3
SCK
Instruction
16-bit Address
SI
1
1
0
1
1
0
0
0 15 14 13 12
2
1
0
High-Impedance
SO
? 2010 Microchip Technology Inc.
DS22021F-page 15
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