参数资料
| 型号： | 25AA640-I/SN |
| 厂商： | Microchip Technology |
| 文件页数： | 9/24页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 64KBIT 1MHZ 8SOIC |
| 标准包装： | 100 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 64K (8K x 8) |
| 速度： | 1MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 管件 |
| 产品目录页面： | 1449 (CN2011-ZH PDF) |
| 其它名称： | 25AA640-I/SNG 25AA640-I/SNG-ND |
25AA640/25LC640
3.4
Write Enable (WREN) and
Write Disable (WRDI)
The following is a list of conditions under which the
write enable latch will be reset:
The 25XX640 contains a write enable latch. See
Table 3-3 for the Write-Protect Functionality Matrix.
This latch must be set before any write operation will be
completed internally. The WREN instruction will set the
latch, and the WRDI will reset the latch.
FIGURE 3-4:
WRITE ENABLE SEQUENCE
CS
?
?
?
?
Power-up
WRDI instruction successfully executed
WRSR instruction successfully executed
WRITE instruction successfully executed
0
1
2
3
4
5
6
7
SCK
SI
0
0
0
0
0
1
1
0
High-Impedance
SO
FIGURE 3-5:
WRITE DISABLE SEQUENCE
CS
0
1
2
3
4
5
6
7
SCK
SI
0
0
0
0
0
1
1 0
0
High-Impedance
SO
? 2008 Microchip Technology Inc.
DS21223H-page 9
相关PDF资料 |
PDF描述 |
|---|---|
| 206504-4 | CONN D-SUB PLUG HD 78POS |
| 206499-4 | CONN D-SUB RECEPT HD 15POS |
| 25C160/P | IC EEPROM 16KBIT 3MHZ 8DIP |
| 206500-4 | CONN D-SUB PLUG HD 26POS |
| 25LC160A-I/ST | IC EEPROM 16KBIT 10MHZ 8TSSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 25AA640T | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:64K SPI Bus Serial EEPROM |
| 25AA640T-E/P | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:64K SPI Bus Serial EEPROM |
| 25AA640T-E/SN | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:64K SPI Bus Serial EEPROM |
| 25AA640T-E/ST | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:64K SPI Bus Serial EEPROM |
| 25AA640T-I/P | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:64K SPI Bus Serial EEPROM |
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