参数资料
型号: 25AA640AT-I/MNY
厂商: Microchip Technology
文件页数: 12/36页
文件大小: 0K
描述: IC EEPROM 64KBIT 10MHZ 8TDFN
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 64K (8K x 8)
速度: 10MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-WFDFN 裸露焊盘
供应商设备封装: 8-TDFN(2x3)
包装: 标准包装
产品目录页面: 1449 (CN2011-ZH PDF)
其它名称: 25AA640AT-I/MNYDKR
25AA640A/25LC640A
2.7
Data Protection
2.8
Power-On State
The following protection has been implemented to
prevent inadvertent writes to the array:
? The write enable latch is reset on power-up
? A write enable instruction must be issued to set
the write enable latch
? After a byte write, page write or STATUS register
write, the write enable latch is reset
? CS must be set high after the proper number of
clock cycles to start an internal write cycle
? Access to the array during an internal write cycle
is ignored and programming is continued
The 25XX640A powers on in the following state:
? The device is in low-power Standby mode
(CS = 1 )
? The write enable latch is reset
? SO is in high-impedance state
? A high-to-low-level transition on CS is required to
enter active state
TABLE 2-4:
WRITE-PROTECT FUNCTIONALITY MATRIX
WEL
(SR bit 1)
0
1
1
1
WPEN
(SR bit 7)
x
0
1
1
WP
(pin 3)
x
x
0 (low)
1 (high)
Protected Blocks
Protected
Protected
Protected
Protected
Unprotected Blocks
Protected
Writable
Writable
Writable
STATUS Register
Protected
Writable
Protected
Writable
x = don’t care
DS21830E-page 12
? 2003-2012 Microchip Technology Inc.
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