参数资料
型号: 25AA640T-I/SN
厂商: Microchip Technology
文件页数: 12/24页
文件大小: 0K
描述: IC EEPROM 64KBIT 1MHZ 8SOIC
标准包装: 3,300
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 64K (8K x 8)
速度: 1MHz
接口: SPI 3 线串行
电源电压: 1.8 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
其它名称: 25AA640T-I/SNG
25AA640T-I/SNG-ND
25AA640/25LC640
3.7
Data Protection
3.8
Power-On-State
The following protection has been implemented to
prevent inadvertent writes to the array:
? The write enable latch is reset on power-up
? A write enable instruction must be issued to set
the write enable latch
? After a byte write, page write, or STATUS register
write, the write enable latch is reset
? CS must be set high after the proper number of
clock cycles to start an internal write cycle
? Access to the array during an internal write cycle
is ignored and programming is continued
The 25XX640 powers on in the following state:
? The device is in low-power Standby mode
(CS = 1 )
? The write enable latch is reset
? SO is in high-impedance state
? A high-to-low transition on CS is required to enter
the active state
.
TABLE 3-3:
WRITE-PROTECT FUNCTIONALITY MATRIX
WPEN
X
0
1
X
WP
X
X
Low
High
WEL
0
1
1
1
Protected Blocks
Protected
Protected
Protected
Protected
Unprotected Blocks
Protected
Writable
Writable
Writable
STATUS Register
Protected
Writable
Protected
Writable
DS21223H-page 12
? 2008 Microchip Technology Inc.
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