参数资料
型号: 25C040-E/P
厂商: Microchip Technology
文件页数: 11/22页
文件大小: 0K
描述: IC EEPROM 4KBIT 3MHZ 8DIP
标准包装: 60
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 4K (512 x 8)
速度: 3MHz
接口: SPI 3 线串行
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 125°C
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
25AA040/25LC040/25C040
3.7
Data Protection
3.8
Power-On State
The following protection has been implemented to
prevent inadvertent writes to the array:
? The write enable latch is reset on power-up
? A write enable instruction must be issued to set
the write enable latch
? After a byte write, page write or STATUS register
write, the write enable latch is reset
? CS must be set high after the proper number of
clock cycles to start an internal write cycle
? Access to the array during an internal write cycle
is ignored and programming is continued
? The write enable latch is reset when the WP pin is
low
The 25XX040 powers on in the following state:
? The device is in low-power Standby mode
(CS = 1 )
? The write enable latch is reset
? SO is in high-impedance state
? A low level on CS is required to enter active state
TABLE 3-3:
WRITE-PROTECT FUNCTIONALITY MATRIX
WP
Low
High
High
WEL
X
0
1
Protected Blocks
Protected
Protected
Protected
Unprotected Blocks
Protected
Protected
Writable
STATUS Register
Protected
Protected
Writable
? 2006 Microchip Technology Inc.
DS21204E-page 11
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