参数资料
型号: 25C080T/SN
厂商: Microchip Technology
文件页数: 10/22页
文件大小: 0K
描述: IC EEPROM 8KBIT 3MHZ 8SOIC
标准包装: 3,300
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 8K (1K x 8)
速度: 3MHz
接口: SPI 3 线串行
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
25AA080/25LC080/25C080
3.5
Read Status Register ( RDSR )
The Write Enable Latch (WEL) bit indicates the status
The Read Status Register ( RDSR ) instruction provides
access to the Status register. The Status register may
be read at any time, even during a write cycle. The
Status register is formatted as follows:
of the write enable latch. When set to a ‘ 1 ’, the latch
allows writes to the array, when set to a ‘ 0 ’, the latch
prohibits writes to the array. The state of this bit can
always be updated via the WREN or WRDI commands
regardless of the state of write protection on the Status
7
WPEN
6
X
5
X
4
X
3
BP1
2
BP0
1
WEL
0
WIP
register. This bit is read only.
The Block Protection (BP0 and BP1) bits indicate
The Write-In-Process (WIP) bit indicates whether the
25XX080 is busy with a write operation. When set to a
‘ 1 ’, a write is in progress, when set to a ‘ 0 ’, no write is
in progress. This bit is read-only.
which blocks are currently write-protected. These bits
are set by the user issuing the WRSR instruction. These
bits are nonvolatile.
See Figure 3-6 for the RDSR timing sequence.
FIGURE 3-6:
CS
READ STATUS REGISTER TIMING SEQUENCE
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCK
instruction
SI
0
0
0
0
0
1
0
1
High-impedance
data from Status register
SO
7
6
5
4
3
2
1
0
DS21230D-page 10
? 2004 Microchip Technology Inc.
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