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参数资料
| 型号： | 25FR60PBF |
| 元件分类： | 整流器 |
| 英文描述： | 25 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封装： | DO-4, 1 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 421K |
| 代理商： | 25FR60PBF |
25F(R) Series
2
Bulletin I2018 rev. C 01/05
www.irf.com
Voltage
V
RRM, maximum
V
RSM, maximum non-
V
R(BR), minimum
I
RRM max.
Type number
Code
repetitive peak
avalanche
@ T
J = 175°C
reverse voltage
voltage
VV
V
(1)
mA
10
100
150
--
20
200
275
--
40
400
500
25F(R)
60
600
725
750
12
80
800
950
100
1000
1200
1150
120
1200
1400
1350
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
F(AV)
Max. average forward current
25
A
180° conduction, half sine wave
@ Case temperature
120
°C
I
F(RMS)
Max. RMS forward current
40
A
P
R
Maximum non-repetitive
10
K/W
10s square pulse, T
J = TJ max.
peak reverse power
see note (2)
I
FSM
Max. peak, one-cycle forward,
356
t = 10ms
No voltage
non-repetitive surge current
373
t = 8.3ms
reapplied
300
t = 10ms
100% V
RRM
314
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
636
t = 10ms
No voltage
Initial T
J = TJ max.
580
t = 8.3ms
reapplied
450
t = 10ms
100% V
RRM
410
t = 8.3ms
reapplied
I2√t
Maximum I2√t for fusing
6360
A2√s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1 Low level value of threshold
voltage
V
F(TO)2 High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
1.30
V
I
pk= 78A, TJ = 25°C, tp = 400s rectangular wave
Parameter
25F(R)
Units Conditions
5.70
(I > π x I
F(AV)), TJ = TJ max.
6.80
(16.7% x π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
m
0.90
(I > π x I
F(AV)), TJ = TJ max.
0.80
(16.7% x π x I
F(AV) < I < π x IF(AV)), TJ = TJ max.
V
A2s
A
Forward Conduction
(2) Available only for Avalanche version, all other parameters the same as 25F.
(1) Avalanche version only available from V
RRM 400V to 1200V.
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| 25FR80 | 功能描述:DIODE STD REC 800V 25A DO-4 RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
| 25FR-80 | 制造商:TRSYS 制造商全称:Transys Electronics 功能描述:STANDARD RECOVERY DIODE |
| 25FR80M | 制造商:IRF 制造商全称:International Rectifier 功能描述:STANDARD RECOVERY DIODES |
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| 25FSH92NH | 制造商:Siemens 功能描述: |
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