参数资料
型号: 25LC1024-I/SM
厂商: Microchip Technology
文件页数: 15/34页
文件大小: 0K
描述: IC EEPROM 1MBIT 20MHZ 8SOIC
标准包装: 90
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 1M (128K x 8)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 2.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.209",5.30mm 宽)
供应商设备封装: 8-SOIJ
包装: 管件
产品目录页面: 1450 (CN2011-ZH PDF)
25LC1024
2.9
SECTOR ERASE
The Sector Erase function will erase all bits (FFh)
inside the given sector. A Write Enable ( WREN ) instruc-
tion must be given prior to attempting a Sector Erase.
This is done by setting CS low and then clocking out
the proper instruction into the 25LC1024. After all eight
bits of the instruction are transmitted, the CS must be
brought high to set the write enable latch.
The Sector Erase function is entered by driving CS
low, followed by the instruction code (Figure 2-9), and
three address bytes. Any address inside the sector to
be erased is a valid address.
CS must then be driven high after the last bit if the
address or the Sector Erase will not execute. Once the
CS is driven high, the self-timed Sector Erase cycle is
started. The WIP bit in the STATUS register can be
read to determine when the Sector Erase cycle is
complete.
If a SECTOR ERASE instruction is given to an address
that has been protected by the Block Protect bits (BP0,
BP1) then the sequence will be aborted and no erase
will occur.
See Table 2-3 for Sector Addressing.
FIGURE 2-9:
CS
SECTOR ERASE SEQUENCE
0
1
2
3
4
5
6
7
8
9 1 0 11
2 9 3 0 3 1
SCK
Instruction
24-bit Address
SI
1
1
0
1
1
0
0
0 23 22 21 20
2
1
0
High-Impedance
SO
? 2010 Microchip Technology Inc.
DS22064D-page 15
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